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power management solution featuring JingYang TNM02K100MX N channel MOSFET with 100V breakdown voltage

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power management solution featuring JingYang TNM02K100MX N channel MOSFET with 100V breakdown voltage

Drain to Source Voltage : 100V

Current - Continuous Drain(Id) : 3A

Operating Temperature - : -55℃~+150℃

RDS(on) : 250mΩ@10V

Gate Threshold Voltage (Vgs(th)) : 1V

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 17pF@50V

Number : 1 N-channel

Output Capacitance(Coss) : 92pF

Input Capacitance(Ciss) : 340pF@50V

Pd - Power Dissipation : 2.5W

Gate Charge(Qg) : 5.2nC@10V

Description : N-Channel 100V 3A 2.5W Surface Mount SOT-223

Mfr. Part # : TNM02K100MX

Model Number : TNM02K100MX

Package : SOT-223

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Product Overview

The TNM02K100MX is a high-density N-channel MOSFET designed for efficient power management. It features an ultra-low RDS(ON) with a high breakdown voltage of 100V and a continuous drain current of 3A. This MOSFET is characterized by its excellent package for good heat dissipation and is suitable for applications in networking, Battery Management Systems (BMS), hand-held electric tools, DC-DC power management, and audio amplifiers.

Product Attributes

  • Brand: JY Electronics
  • Origin: China
  • Model: TNM02K100MX
  • Package: TNM02K100MX
  • Marking: 02K10

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Units
Absolute Maximum Ratings
VDSS Drain-Source Voltage (TC=25 unless otherwise specified) - - 100 V
VGSS Gate-Source Voltage (TC=25 unless otherwise specified) - - 20 V
ID Continuous Drain Current TC = 25 - - 3 A
ID Continuous Drain Current TC = 100 - - 1.5 A
IDM Pulsed Drain Current note1 - - 12 A
PD Power Dissipation TA = 25 - - 2.5 W
RJA Thermal Resistance, Junction to Ambient - - 50 /W
TJ, TSTG Operating and Storage Temperature Range - -55 - +150
Electrical Characteristics
V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250A 100 - - V
IDSS Zero Gate Voltage Drain Current VDS =100V, VGS = 0V - - 1.0 A
IGSS Gate to Body Leakage Current VDS =0V,VGS = 20V - - 100 nA
VGS(th) Gate Threshold Voltage VDS= VGS, ID=250A 1.0 1.8 3.0 V
RDS(on) Static Drain-Source on-Resistance VGS =10V, ID =2A - 250 280 m
RDS(on) Static Drain-Source on-Resistance VGS =4.5V, ID =1A - 260 310 m
gFS Forward Transconductance VDS =10V, ID =3A - 1.1 - S
Dynamic Characteristics
Ciss Input Capacitance VDS =50V, VGS = 0V, f = 1.0MHz - 340 - pF
Coss Output Capacitance - - 92 - pF
Crss Reverse Transfer Capacitance - - 17 - pF
Qg Total Gate Charge VDS =50V, ID =1A, VGS =10V - 5.2 - nC
Qgs Gate-Source Charge - - 1.0 - nC
Qgd Gate-Drain(Miller) Charge - - 1.4 - nC
Switching Characteristics
td(on) Turn-on Delay Time VDD=50V,RL=39, RG=1, VGS =10V - 14 - ns
tr Turn-on Rise Time - - 54 - ns
td(off) Turn-off Delay Time - - 18 - ns
tf Turn-off Fall Time - - 11 - ns
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain to Source Diode Forward Current - - - 3 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - - 12 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, IS=1A - - 1.2 V

2405091033_JingYang-TNM02K100MX_C6423777.pdf


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