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High current P Channel MOSFET JingYang TPM0730N5X optimized for synchronous buck converter circuits

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High current P Channel MOSFET JingYang TPM0730N5X optimized for synchronous buck converter circuits

Drain to Source Voltage : 30V

Current - Continuous Drain(Id) : 70A

Operating Temperature - : -55℃~+150℃

RDS(on) : 7.2mΩ@10V

Gate Threshold Voltage (Vgs(th)) : 2.5V

Type : P-Channel

Reverse Transfer Capacitance (Crss@Vds) : 140pF

Number : 1 P-Channel

Output Capacitance(Coss) : 255pF

Input Capacitance(Ciss) : 3.45nF

Pd - Power Dissipation : 90W

Gate Charge(Qg) : 60nC@10V

Description : P-Channel 30V 70A 90W Surface Mount PDFN5x6-8L

Mfr. Part # : TPM0730N5X

Model Number : TPM0730N5X

Package : PDFN5X6-8L

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Product Overview

The TPM0730N5X is a high cell density trenched P-Channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full functional reliability approval.

Product Attributes

Certifications: RoHS, Green Product

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	VDSS				-30	V
Gate Source Voltage	VGSS				20	V
Drain Current (Continuous)	ID	TA=25C			-70	A
Drain Current (Continuous)	ID	TA=100C			-50	A
Drain Current (Pulse)	IDM				-200	A
Power Dissipation	PD	TA=25C			90	W
Power Dissipation	PD	TA=100C			54	W
Operating Temperature/ Storage Temperature	TJ/TSTG		-55		150	C
Single Pulse Avalanche Energy	EAS			80		mJ
Thermal Resistance, Junction-to-Ambient	RJA			50		C/W
Static Drain-Source Breakdown Voltage	V(BR)DSS	VGS=0VID=-250uA	-30			V
Zero Gate Voltage Drain Current	IDSS	VDS=-24VVGS=0V			-1	uA
Gate Threshold Voltage	VGS(TH)	VDS=VGSIDS=-250uA	-1.2		-2.5	V
Gate Leakage Current	IGSS	VGS=20VVDS=0V			100	nA
Drain-Source On-state Resistance	RDS(on)	VGS=-10VID=-20A			7.2	m
Drain-Source On-state Resistance	RDS(on)	VGS=-4.5VID=-15A			12	m
Diode Forward Voltage	VSD	ISD=-1AVGS=0V			-1.2	V
Total Gate Charge	Qg	VGS=-10VVDD=-15V ID=-18A		60		nC
Gate- Source Charge	Qgs			9		nC
Gate- Drain Charge	Qgd			15		nC
Turn-on Delay Time	td(on)	VGS=-10VVDD=-15V ID=-20ARGEN=3.3		17		ns
Turn-on Rise Time	tr			40		ns
Turn-off Delay Time	td(off)			55		ns
Turn-off Fall Time	tf			13		ns
Dynamic Input Capacitance	Ciss	VGS=0VVDS=-25Vf=1MHZ		3450		pF
Output Capacitance	Coss			255		pF
Reverse Transfer Capacitance	Crss			140		pF

2405091033_JingYang-TPM0730N5X_C3038101.pdf

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