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High speed switching MOSFET Jilin Sino Microelectronics JCS5N60FC 220MF with low gate charge and Rds

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High speed switching MOSFET Jilin Sino Microelectronics JCS5N60FC 220MF with low gate charge and Rds

Drain to Source Voltage : 600V

Current - Continuous Drain(Id) : 4A

Operating Temperature - : -55℃~+150℃

RDS(on) : 2.5Ω@10V

Gate Threshold Voltage (Vgs(th)) : 4V@250uA

Reverse Transfer Capacitance (Crss@Vds) : 17pF

Number : 1 N-channel

Output Capacitance(Coss) : 82pF

Input Capacitance(Ciss) : 810pF

Pd - Power Dissipation : -

Gate Charge(Qg) : 14nC@10V

Description : 600V 4A 2.5Ω@10V 4V@250uA 1 N-channel TO-220 Single FETs, MOSFETs RoHS

Mfr. Part # : JCS5N60FC-220MF

Model Number : JCS5N60FC-220MF

Package : TO-220

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Product Overview

The JCS5N60C is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd.
Certifications: RoHS

Technical Specifications

Order Code	Marking	Package	ID (A)	VDSS (V)	Rds(on) () (Vgs=10V)	Qg (nC)
JCS5N60VC-V-B / JCS5N60VC-V-BR	N/A	IPAK	4.0	600	2.5	9
JCS5N60RC-R-B / JCS5N60RC-R-BR / JCS5N60RC-R-A / JCS5N60RC-R-AR	JCS5N60R	DPAK	4.0	600	2.5	9
JCS5N60CC-C-B / JCS5N60CC-C-BR	N/A	TO-220C	4.0	600	2.5	9
JCS5N60FC-F-B / JCS5N60FC-F-BR	N/A	TO-220MF	4.0	600	2.5	9

Absolute Maximum Ratings (Tc=25)

Parameter	Symbol	JCS5N60VC/RC	JCS5N60CC	JCS5N60FC	Unit
Drain-Source Voltage	VDSS	600	600	600	V
Drain Current -continuous (T=25)	ID	4.0*	4.0*	4.0*	A
Drain Current -continuous (T=100)	ID	2.5*	2.5*	2.5*	A
Drain Current - pulse (note 1)	IDM	16*	16*	16*	A
Gate-Source Voltage	VGSS	30	30	30	V
Single Pulsed Avalanche Energy (note 2)	EAS	416	416	416	mJ
Avalanche Current (note 1)	IAR	4.0	4.0	4.0	A
Repetitive Avalanche Current (note 1)	EAR	11.0	11.0	11.0	mJ
Peak Diode Recovery dv/dt (note 3)	dv/dt	5.5	5.5	5.5	V/ns
Power Dissipation (TC=25)	PD	51	100	33	W
Power Dissipation -Derate above 25	-	0.39	0.80	0.26	W/
Operating and Storage Temperature Range	TJTSTG	-55+150
Maximum Lead Temperature for Soldering Purposes	TL	300

Electrical Characteristics

Parameter	Symbol	Tests conditions	Min	Typ	Max	Unit
Off Characteristics
Drain-Source Voltage	BVDSS	ID=250A, VGS=0V	600	-	-	V
Breakdown Voltage Temperature Coefficient	BVDSS/ TJ	ID=250A, referenced to 25	-	0.65	-	V/
Zero Gate Voltage Drain Current	IDSS	VDS=600V,VGS=0V, TC=25	-	-	10	A
Zero Gate Voltage Drain Current	IDSS	VDS=480V, TC=125	-	-	100	A
Gate-body leakage current, forward	IGSSF	VDS=0V, VGS =30V	-	-	100	nA
Gate-body leakage current, reverse	IGSSR	VDS=0V, VGS =-30V	-	-	-100	nA
On-Characteristics
Gate Threshold Voltage	VGS(th)	VDS = VGS , ID=250A	2.0	-	4.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V , ID=2A	-	2.0	2.5
Forward Transconductance	gfs	VDS = 40V , ID=2Anote 4	-	3.7	-	S
Dynamic Characteristics
Input capacitance	Ciss	VDS=25V, VGS =0V, f=1.0MHZ	-	690	810	pF
Output capacitance	Coss	VDS=25V, VGS =0V, f=1.0MHZ	-	62	82	pF
Reverse transfer capacitance	Crss	VDS=25V, VGS =0V, f=1.0MHZ	-	12	17	pF
Switching Characteristics
Turn-On delay time	td(on)	VDD=300V,ID=4A,RG=25 note 45	-	30	50	ns
Turn-On rise time	tr	VDD=300V,ID=4A,RG=25 note 45	-	75	120	ns
Turn-Off delay time	td(off)	VDD=300V,ID=4A,RG=25 note 45	-	60	150	ns
Turn-Off Fall time	tf	VDD=300V,ID=4A,RG=25 note 45	-	55	120	ns
Total Gate Charge	Qg	VDS =480V , ID=4A VGS =10V note 45	-	9	14	nC
Gate-Source charge	Qgs	VDS =480V , ID=4A VGS =10V note 45	-	2.9	-	nC
Gate-Drain charge	Qg	VDS =480V , ID=4A VGS =10V note 45	-	4.0	-	nC
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain -Source Diode Forward Current	IS	-	-	4	A
Maximum Pulsed Drain-Source Diode Forward Current	ISM	-	-	16	A
Drain-Source Diode Forward Voltage	VSD	VGS=0V, IS=4.0A	-	-	1.4	V
Reverse recovery time	trr	VGS=0V, IS=4.0A dIF/dt=100A/s (note 4)	-	330	-	ns
Reverse recovery charge	Qrr	VGS=0V, IS=4.0A dIF/dt=100A/s (note 4)	-	2.67	-	C

Thermal Characteristics

Parameter	Symbol	JCS5N60VC/RC	JCS5N60CC	JCS5N60FC	Unit
Thermal Resistance, Junction to Case	Rth(j-c)	2.50	1.25	3.79	/W
Thermal Resistance, Junction to Ambient	Rth(j-A)	83	62.5	62.5	/W

2411201845_Jilin-Sino-Microelectronics-JCS5N60FC-220MF_C272590.pdf

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