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High voltage N channel power mosfet Jingdao Microelectronics F10N65L designed for switching performance

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High voltage N channel power mosfet Jingdao Microelectronics F10N65L designed for switching performance

Drain to Source Voltage : 650V

Current - Continuous Drain(Id) : 10A

RDS(on) : 1Ω@10V,5A

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 4V

Reverse Transfer Capacitance (Crss@Vds) : 11pF

Pd - Power Dissipation : 65W

Input Capacitance(Ciss) : 1.601nF@15V

Gate Charge(Qg) : 35nC@10V

Description : 650V 10A 65W Through Hole TO-220F-3L

Mfr. Part # : F10N65L

Model Number : F10N65L

Package : TO-220F-3L

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Product Overview

The F10N65L is a high voltage N-CHANNEL POWER MOSFET designed for high-speed switching applications. It offers superior characteristics including fast switching times, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is ideal for use in switching power supplies and adaptors.

Product Attributes

Brand: Jingdao Microelectronics co.LTD
Origin: Shandong, China
Case Material: Green molding compound, UL flammability classification 94V-0,Halogen-free.
Certifications: RoHS compliant

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Conditions
Absolute Maximum Ratings
Drain-Source Voltage	VDSS	650	V	Ta=25C, Unless Otherwise Specified
Gate-Source Voltage	VGSS	±30	V	Ta=25C, Unless Otherwise Specified
Continuous Drain Current	ID	10	A	Tc=25C
Pulsed Drain Current	IDM	40	A	Note 2
Avalanche Energy Single Pulsed	EAS	6.3	mJ	Note 3
Power Dissipation	PD	500	W	Tc = 25C
Operating junction and storage temperature	TJ,TSTG	-55 ~+150	°C
Thermal Resistance
Thermal resistance, junction – case	RthJC	4.0	°C/W	Tc=25°C
Thermal resistance, junction – case	RthJC	63	°C/W	Tc=100°C
Thermal resistance, junction – ambient(min. footprint)	RthJA	35	°C/W
Electrical Characteristics
Off Characteristics				Ta=25°C, Unless Otherwise Specified
Drain-Source Breakdown Voltage	BVDSS	650	V	VGS=0V,ID=250uA
Gate-Source Leakage Current	IGSS	±1.0	μA	VGS=±30V,VDS=0V
Drain-Source Leakage Current	IDSS	1.0	μA	VDS=650V,VGS=0V
On Characteristics
Static Drain-Source On-State Resistance	RDS(ON)	1.0	Ω	VGS=10V,ID=5.0A
Gate Threshold Voltage	VGS(TH)	2.0	V	VDS=VGS,ID=250uA
Dynamic Characteristics
Input Capacitance	CISS	160	pF	VDS=15V, VGS=0V, f=1.0MHz
Output Capacitance	COSS	137	pF	VDS=15V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance	CRSS	11	pF	VDS=15V, VGS=0V, f=1.0MHz
Total Gate Charge	QG	32	nC	VDS=520V,VGS=10V, ID=10A (NOTE1,2)
Gate-Drain Charge	QGD	4.2	nC	VDS=520V,VGS=10V, ID=10A (NOTE1,2)
Gate-Source Charge	QGS	1.4	nC	VDS=520V,VGS=10V, ID=10A (NOTE1,2)
Turn-On Delay Time	tD(ON)	15	ns	VDS=325V,VGS=10V, RG=25Ω,ID=10A (NOTE1,2)
Turn-On Rise Time	tR	90	ns	VDS=325V,VGS=10V, RG=25Ω,ID=10A (NOTE1,2)
Turn-Off Delay Time	tD(OFF)	18	ns	VDS=325V,VGS=10V, RG=25Ω,ID=10A (NOTE1,2)
Turn-Off Fall Time	tF	23	ns	VDS=325V,VGS=10V, RG=25Ω,ID=10A (NOTE1,2)
Drain-source Diode Characteristics And Maximum Ratings
Drain-Source Diode Forward Voltage	VSD	1.4	V	ISD=10A,VGS=0V (Note 1)
Maximum Body-Diode Continuous Current	IS	10	A
Maximum Body-Diode Pulsed Current	ISM	40	A
Reverse Recovery Time	trr	320	ns	IF=10A di/dt=100A/us ,VGS=0V (Note 1)
Reverse Recovery Charge	Qrr	4.2	μC	IF=10A di/dt=100A/us ,VGS=0V (Note 1)
Transconductance	gfs	4.8	S	VDS=15V,ID=2A

2305040947_Jingdao-Microelectronics-F10N65L_C5632442.pdf

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