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High cell density P channel MOSFET JingYang TPM3012V1SX ideal for load switch and power management

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High cell density P channel MOSFET JingYang TPM3012V1SX ideal for load switch and power management

Drain to Source Voltage : 12V

Current - Continuous Drain(Id) : 5A

RDS(on) : 32mΩ@4.5V,1A

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 1V

Type : P-Channel

Reverse Transfer Capacitance (Crss@Vds) : 116pF

Output Capacitance(Coss) : 219pF

Input Capacitance(Ciss) : 984pF

Pd - Power Dissipation : 1.5W

Gate Charge(Qg) : 8nC@4.5V

Description : P-Channel 12V 5A 1.5W Surface Mount SOT-23

Mfr. Part # : TPM3012V1SX

Model Number : TPM3012V1SX

Package : SOT-23

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Product Overview

The TPM3012V1SX is a high cell density trenched P-channel MOSFET, offering excellent R_DS(ON) and efficiency for most small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval.

Product Attributes

Brand: JY Electronics (implied by website)
Origin: China (implied by website)
Certifications: RoHS, Green Product

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	V_DSS	V_GS=0VI_D=-250uA	-12	-18	V
Drain-Source Voltage	V_DSS	V_DS=-12VV_GS=0V	--	--	1	uA
Gate Threshold Voltage	V_GS(TH)	V_DS=V_GSI_DS=-250uA	-0.4	--	-1	V
Gate Leakage Current	I_GSS	V_GS=12VV_DS=0V	--	--	100	nA
Drain-Source On-state Resistance	R_DS(on)	V_GS=-4.5VI_D=-1A	--	23	32	m
Drain-Source On-state Resistance	R_DS(on)	V_GS=-2.5VI_D=-0.5A	--	35	50	m
Forward Transconductance	g_fs	I_D=-2AV_DS=-5V	--	6	--	S
Gate Resistance	R_g	V_GS=0VV_DS=0Vf=1MHZ	--	16	32
Total Gate Charge	Q_g		--	8	--	nC
Gate-Source Charge	Q_gs		--	1.14	--	nC
Gate-Drain Charge	Q_gd		--	1.5	--	nC
Turn-on Delay Time	t_d(on)		--	13.6	--	ns
Turn-on Rise Time	t_r		--	35	--	ns
Turn-off Delay Time	t_d(off)		--	32	--	ns
Turn-off Fall Time	t_f		--	10	--	ns
Input Capacitance	C_iss	V_GS=0VV_DS=-10Vf=1MHZ	--	984	--	pF
Output Capacitance	C_oss		--	219	--	pF
Reverse Transfer Capacitance	C_rss		--	116	--	pF
Continuous Source Current	I_S	V_G=V_D=0V , Force Current	--	--	-4.6	A
Pulsed Source Current	I_SM		--	--	-16	A
Diode Forward Voltage	V_SD	I_SD=-1AV_GS=0V	--	--	-1.2	V
Drain-Source Voltage	V_DSS		-12			V
Gate Source Voltage	V_GSS			12		V
Drain Current (Continuous)	I_D	T_A=25C		-5		A
Drain Current (Continuous)	I_D	T_A=70C		-3.9		A
Drain Current (Pulse)	I_DM			-16		A
Power Dissipation	P_D	T_A=25C		1.5		W
Operating Temperature/ Storage Temperature	T_J/T_STG		-55	to	150	C
Thermal Resistance, Junction-to-Ambient	R_JA			125		C/W
Thermal Resistance Junction-Case	R_JC			82		C/W

2409302200_JingYang-TPM3012V1SX_C5364038.pdf

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