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Power MOSFET Jingdao Microelectronics F12N60L designed for switching in power supply and adaptor systems

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Power MOSFET Jingdao Microelectronics F12N60L designed for switching in power supply and adaptor systems

Drain to Source Voltage : 600V

Current - Continuous Drain(Id) : 12A

RDS(on) : 750mΩ@10V,6A

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 4V

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 10pF

Output Capacitance(Coss) : 185pF

Pd - Power Dissipation : 50W

Input Capacitance(Ciss) : 2.14nF@25V

Gate Charge(Qg) : 48nC@10V

Description : N-Channel 600V 12A 50W Through Hole TO-220F-3L

Mfr. Part # : F12N60L

Model Number : F12N60L

Package : TO-220F-3L

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Product Overview

The F12N60L is a high voltage N-CHANNEL POWER MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is commonly used in switching power supplies and adaptors.

Product Attributes

Brand: Jingdao Microelectronics
Origin: Shandong, China
Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
Color: Not specified
Certifications: RoHS compliant

Technical Specifications

Parameter	Symbols	Ratings	Units	Test Conditions
Absolute Maximum Ratings (Ta=25C, Unless Otherwise Specified)
Drain-Source Voltage	VDSS	600	V
Gate-Source Voltage	VGSS	±30	V
Continuous Drain Current	ID	12	A	Tc=25C
Pulsed Drain Current (Note 2)	IDM	48	A
Avalanche Energy Single Pulsed (Note 3)	EAS	576	mJ	L = 10mH, IAS =6.2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
Power Dissipation (Tc = 25°C)	PD	7.8	W
Operating junction and storage temperature	TJ,TSTG	-55 ~+150	°C
Thermal Resistance
Thermal resistance, junction – case	RthJC	4	°C/W	Tc=25°C
Thermal resistance, junction – case	RthJC	63	°C/W	Tc=100°C
Thermal resistance, junction – ambient(min. footprint)	RthJA	50	°C/W
Electrical Characteristics (ta=25°c, Unless Otherwise Specified)
Off Characteristics
Drain-Source Breakdown Voltage	BVDSS	600	V	VGS=0V,ID=250µA
Gate- Source Leakage Current	IGSS	±1.0	µA	VGS=-30V,VDS=0V
Drain-Source Leakage Current	IDSS	250	nA	VDS=600V,VGS=0V
On Characteristics
Static Drain-Source On-State Resistance	RDS(ON)	0.75	Ω	VGS=10V,ID=6.0A
Gate Threshold Voltage	VGS(TH)	2.0	V	VDS=VGS,ID=250µA
Forward Transconductance	gfs	5.7	S	VDS=15V,ID=2A
Switching Characteristics
Total Gate Charge (Note 1)	QG	48	nC	VDS=480V,VGS=10V, ID=12A (NOTE1,2)
Gate-Drain Charge	QGD	8.5	nC
Gate-Source Charge	QGS	21	nC
Turn-On Delay Time (Note 1)	tD(ON)	30	ns	VDS=300V, RG=25Ω (NOTE1,2)
Turn-On Rise Time	tR	85	ns
Turn-Off Delay Time	tD(OFF)	140	ns
Turn-Off Fall Time	tF	90	ns
Drain-Source Diode Characteristics And Maximum Ratings
Drain-Source Diode Forward Voltage (Note 1)	VSD	1.4	V	ISD=12A,VGS=0V
Reverse Recovery Time (Note 1)	trr	425	ns	IF=12A di/dt=100A/us
Reverse Recovery Charge	Qrr	4.3	µC
Maximum Body-Diode Continuous Current	IS	12	A
Dynamic Characteristics
Input Capacitance	CISS	2140	pF	VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance	COSS	185	pF
Reverse Transfer Capacitance	CRSS	10	pF
Gate resistance	RG	2.6	Ω

2305040947_Jingdao-Microelectronics-F12N60L_C5632443.pdf

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