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High Density Cell Structure N Channel MOSFET JingYang 2N7002KDWX with Low RDS On and ESD Protection

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High Density Cell Structure N Channel MOSFET JingYang 2N7002KDWX with Low RDS On and ESD Protection

Drain to Source Voltage : 60V

Current - Continuous Drain(Id) : 340mA

RDS(on) : 1.3Ω@10V

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 1.4V

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 10pF

Number : 1 N-channel

Output Capacitance(Coss) : 30pF

Input Capacitance(Ciss) : 40pF

Pd - Power Dissipation : 150mW

Description : N-Channel 60V 340mA 150mW Surface Mount SOT363

Mfr. Part # : 2N7002KDWX

Model Number : 2N7002KDWX

Package : SOT363

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Product Overview

The 2N7002KDWX is a 60V N-Channel MOSFET designed with a high-density cell structure for low on-resistance (RDS(on)). It functions as a voltage-controlled small signal switch, offering ruggedness, reliability, and high saturation current capability. This MOSFET is ESD protected with a Gate HBM rating of 2.5KV and is suitable for load switching in portable devices and DC/DC converters.

Product Attributes

Brand: JY Electronics (implied by website)
Model: 2N7002KDWX
Channel Type: N-Channel
Package: SOT-363
ESD Protection: Gate HBM 2.5KV

Technical Specifications

Parameter	Symbol	Test Condition	Min	Type	Max	Unit
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage	VDS				60	V
Gate-Source Voltage	VGS			±20		V
Continuous Drain Current	ID				340	mA
Power Dissipation	PD	(1)			150	mW
Thermal Resistance from Junction to Ambient	RθJA	(1)			833	℃/W
Junction Temperature	TJ				150	℃
Storage Temperature	TSTG		-55		+150	℃
ELECTRICAL CHARACTERISTICS
Drain-source breakdown voltage	V(BR)DSS	VGS = 0V, ID =250µA	60			V
Zero gate voltage drain current	IDSS	VDS =48V,VGS = 0V			1	µA
Gate-body leakage current	IGSS	VGS =±20V, VDS = 0V			±10	µA
Gate threshold voltage*	VGS(th)	VDS =VGS, ID =250µA	1	1.4	2.5	V
Drain-source on-resistance*	RDS(on)	VGS =4.5V, ID =200mA		1.3	3.5	℆
Drain-source on-resistance*	RDS(on)	VGS =10V, ID =300mA		1.4	4	℆
Diode Forward Voltage	VSD	VGS=0V, IS=300mA			1.5	V
Recovered charge	Qr	VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/µs			30	nC
Dynamic characteristics**
Input Capacitance	Ciss	VDS =10V,VGS =0V,f =1MHz		40		pF
Output Capacitance	Coss			30		pF
Reverse Transfer Capacitance	Crss			10		pF
Switching Characteristics**
Turn-on delay time	td(on)	VGS=10V,VDD=50V,RG=50℆, RGS=50℆, RL=250℆		10		ns
Turn-off delay time	td(off)			15		ns
Reverse recovery Time	tf	VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/µs		30		ns
GATE-SOURCE ZENER DIODE
Gate-Source Breakdown Voltage	BVGSO	Igs=±1mA (Open Drain)	±21.5		±30	V

2409302231_JingYang-2N7002KDWX_C7434074.pdf

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