Home > Single FETs, MOSFETs >

N channel Power MOSFET Jingdao Microelectronics F7N70 designed for switching power supply applications

Product Categories

Bridge Rectifiers [1296]
Single Bipolar Transistors [2284]
JFETs [73]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [550]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1371]
SCRs [158]
SCRs - Modules [48]
TRIACs [559]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]
Single FETs, MOSFETs [3000]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

N channel Power MOSFET Jingdao Microelectronics F7N70 designed for switching power supply applications

Drain to Source Voltage : 700V

Current - Continuous Drain(Id) : 7A

RDS(on) : 1.4Ω@10V,3.5A

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 4V

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 3.5pF

Output Capacitance(Coss) : 27pF

Pd - Power Dissipation : 41W

Input Capacitance(Ciss) : 497pF@25V

Gate Charge(Qg) : 18nC@10V

Description : N-Channel 700V 7A 41W Through Hole ITO-220ABW

Mfr. Part # : F7N70

Model Number : F7N70

Package : ITO-220ABW

Contact Now

Product Overview

The F7N70 is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is typically used in switching power supplies and adaptors.

Product Attributes

Brand: Jingdao Microelectronics co.LTD
Model: F7N70
Case: ITO-220ABW
Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
Lead Free Finish: RoHS compliant
Origin:

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Conditions
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage	VDSS	700	V	TA=25C, unless otherwise specified
Gate-Source Voltage	VGSS	±30	V	TA=25C, unless otherwise specified
Continuous Drain Current	ID	7	A	Tc=25
Continuous Drain Current	ID	4.5	A	Tc=100
Pulsed Drain Current (Note 2)	IDM	28	A	TA=25C, unless otherwise specified
Avalanche Energy Single Pulsed (Note 3)	EAS	530	mJ	L = 30mH, IAS = 5.9A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
Peak Diode Recovery dv/dt (Note 4)	dv/dt	50	V/ns	ISD ≤ 7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
Power Dissipation	PD	41	W	Tc=25
Junction to Ambient	RthJA	63	°C/W
Junction to Case	RthJC	2.99	°C/W
Operation Junction Temperature and Storage Temperature	TJ, stg	-55 ~ +150	°C
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown Voltage	BVDSS	700	V	VGS=0V,ID=250μA
Gate-Source Leakage Current	IGSS	±100	nA	VGS=±30V,VDS=0V
Drain-Source Leakage Current	IDSS	1	μA	VDS=700V,VGS=0V
Gate Threshold Voltage	VGS(TH)	2.0	V	VDS=VGS,ID=250μA
Static Drain-Source On-State Resistance	RDS(ON)	1.4	Ω	VGS=10V,ID=3.5A
Static Drain-Source On-State Resistance	RDS(ON)	1.18	Ω	VGS=10V,ID=7A
DYNAMIC CHARACTERISTICS
Input Capacitance	CISS	530	pF	VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance	COSS	100	pF
Reverse Transfer Capacitance	CRSS	28	pF
Total Gate Charge (Note 1)	QG	27	nC	VDS=560V,VGS=10V, ID=7A,IG=1mA (NOTE1,2)
Gate-Drain Charge	QGD	10	nC
Gate-Source Charge	QGS	3.9	nC
SWITCHING CHARACTERISTICS
Turn-On Delay Time (Note 1)	tD(ON)	10	ns	VDS=100V,VGS=10V, ID=7A,RG=25Ω (NOTE1,2)
Turn-On Rise Time	tR	18	ns
Turn-Off Delay Time	tD(OFF)	317	ns
Turn-Off Fall Time	tF	26	ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Body-Diode Continuous Current	IS	7	A
Maximum Body-Diode Pulsed Current	ISM	28	A
Drain-Source Diode Forward Voltage (Note 1)	VSD	1.4	V	IS=7A,VGS=0V
Reverse Recovery Time (Note 1)	trr	3.5	μs	IS=7A,VGS=0V, di/dt=100A/μs
Reverse Recovery Charge	Qrr	9.3	μC	IS=7A,VGS=0V, di/dt=100A/μs
Peak Diode Recovery dv/dt (Note 4)	dv/dt	50	V/ns	ISD ≤ 7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

2209091800_Jingdao-Microelectronics-F7N70_C5157087.pdf

Buy cheap N channel Power MOSFET Jingdao Microelectronics F7N70 designed for switching power supply applications product

N channel Power MOSFET Jingdao Microelectronics F7N70 designed for switching power supply applications Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!