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Energy synchronous buck converter mosfet JingYang TNM2030N3X with full function reliability approval

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Energy synchronous buck converter mosfet JingYang TNM2030N3X with full function reliability approval

Drain to Source Voltage : 30V

Current - Continuous Drain(Id) : 28A

RDS(on) : 18mΩ@10V,28A

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 1V

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 65pF

Number : 1 N-channel

Output Capacitance(Coss) : 81pF

Pd - Power Dissipation : 20W

Input Capacitance(Ciss) : 572pF

Gate Charge(Qg) : 7.2nC@10V

Description : N-Channel 30V 28A 20W Surface Mount DFN-8L(3x3)

Mfr. Part # : TNM2030N3X

Model Number : TNM2030N3X

Package : DFN-8L(3x3)

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Product Overview

The TNM2030N3X is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval.

Product Attributes

Certifications: RoHS, Green Product
Origin: www.jy-electronics.com.cn
Contact: service@jy-electronics.com.cn

Technical Specifications

Parameter	Symbol	Ratings	Unit	Test Conditions
Drain-Source Voltage	VDSS	30	V
Gate Source Voltage	VGSS	±20	V
Drain Current (Continuous) @ TA=25°C	ID	28	A
Drain Current (Continuous) @ TA=100°C	ID	18	A
Drain Current (Pulse)	IDM	55	A	*B
Power Dissipation @ TA=25°C	PD	20	W
Operating/Storage Temperature	TJ/TSTG	-55~150	°C
Single Pulse Avalanche Energy	EAS	22.1	mJ
Avalanche Current	IAS	21	A
Thermal Resistance, Junction-to-Ambient	RθJA	75	°C/W	A
Thermal resistance, junction-case max	RθJC	6	°C/W
Drain-Source Breakdown Voltage	V(BR)DSS	30	V	VGS=0VID=250uA
Zero Gate Voltage Drain Current	IDSS	1	uA	VDS=24VVGS=0V
Gate Threshold Voltage	VGS(TH)	1.0 - 2.5	V	VDS=VGSIDS=250uA
Gate Leakage Current	IGSS	±100	nA	VGS=±20VVDS=0V
Drain-Source On-state Resistance	RDS(on)	18	mΩ	VGS=10VID=10A
Drain-Source On-state Resistance	RDS(on)	30	mΩ	VGS=4.5VID=5A
Forward Transconductance	gfs	4.5	S	ISD=1AVDS=5V
Total Gate Charge	Qg	7.2	nC	VGS=4.5VVDS=20VID=10A
Gate-Source Charge	Qgs	1.4	nC
Gate-Drain Charge	Qgd	2.2	nC
Turn-on Delay Time	td(on)	4.1	ns	VGS=10VVDD=12VID=5A RGEN=3.3Ω
Turn-on Rise Time	tr	9.8	ns
Turn-off Delay Time	td(off)	15.5	ns
Turn-off Fall Time	tf	6.0	ns
Input Capacitance	Ciss	572	pF	VGS=0VVDS=15Vf=1MHZ
Output Capacitance	Coss	81	pF
Reverse Transfer Capacitance	Crss	65	pF
Continuous Diode Forward Current	IS	28	A	VG=VD=0V , Force Current
Diode Forward Voltage	VSD	1.2	V	ISD=1AVGS=0V

2405091033_JingYang-TNM2030N3X_C5307990.pdf

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