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Low Voltage Operation and Low Offset Voltage N Channel 20V 1.2A N MOSFET JingYang TNM01K20CX for Power Conversion

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Low Voltage Operation and Low Offset Voltage N Channel 20V 1.2A N MOSFET JingYang TNM01K20CX for Power Conversion

Pd - Power Dissipation : 250mW

Configuration : -

Drain to Source Voltage : 20V

Current - Continuous Drain(Id) : 900mA

RDS(on) : 250mΩ@4.5V;300mΩ@2.5V;400mΩ@1.8V

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 1V@250uA

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 6pF

Number : 1 N-channel

Output Capacitance(Coss) : 9pF

Input Capacitance(Ciss) : 43pF

Gate Charge(Qg) : 2nC@4.5V

Description : N-Channel 20V 900mA 250mW Surface Mount SOT-723

Mfr. Part # : TNM01K20CX

Model Number : TNM01K20CX

Package : SOT-723

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Product Overview

This N-Channel 20V, 1.2A N-MOSFET, designed with TrenchFET Power MOSFET technology, offers excellent performance for high-speed and low-voltage applications. It features low on-resistance, a low threshold voltage, and gate-source ESD protection, making it ideal for battery-operated systems, power supply converters, and driving various loads like relays, solenoids, lamps, and displays. Its low offset voltage and low-voltage operation capabilities ensure efficient performance even under low battery conditions.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: S- Prefix for Automotive and Other Applications Requiring (implied)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	V(BR)DSS	VGS=0VID=250uA	20	--	--	V
Zero Gate Voltage Drain Current	IDSS	VDS=16VVGS=0V	--	--	1	uA
Gate Threshold Voltage	VGS(TH)	VDS=VGSIDS=250uA	0.5	--	1.0	V
Gate Leakage Current	IGSS	VGS=12VVDS=0V	--	--	10	uA
Drain-Source On-state Resistance	RDS(on)	VGS=4.5VID=0.5A	--	250	400	m
		VGS=2.5VID=0.5A	--	300	500	m
		VGS=1.8VID=0.35A	--	400	650	m
Switching Characteristics		VGS=4.5VVDS=10VID=1A	--	2	--	nC
		VGS=4.5VVDS=10VRGEN=6ID=2A	--	1.2	--	ns
		VGS=4.5VVDS=10VRGEN=6ID=2A	--	25	--	ns
Capacitance		VGS=0VVDS=10Vf=1MHZ	--	43	--	pF
			--	9	--	pF
			--	6	--	pF
Continuous Diode Forward Current	ISD	VG=VD=0V , Force Current	--	--	3.5	A
Diode Forward Voltage	VSD	ISD=0.5AVGS=0V	--	--	1.3	V
Reverse Recovery Time	trr	IF = 1A di/dt = 100 A/s	--	9	--	nS

2504101957_JingYang-TNM01K20CX_C5307986.pdf

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