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High voltage MOSFET with fast switching and ruggedness features Jingdao Microelectronics D4N65 N channel power device

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High voltage MOSFET with fast switching and ruggedness features Jingdao Microelectronics D4N65 N channel power device

Drain to Source Voltage : 650V

Current - Continuous Drain(Id) : 4A

RDS(on) : 2.6Ω@10V,2A

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 4V

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 10pF

Output Capacitance(Coss) : 55pF

Pd - Power Dissipation : 32W

Input Capacitance(Ciss) : 560pF

Gate Charge(Qg) : 13nC@10V

Description : N-Channel 650V 4A 32W Surface Mount TO-252-3

Mfr. Part # : D4N65

Model Number : D4N65

Package : TO-252-3

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Product Overview

The D4N65 is a high voltage N-channel Power MOSFET designed with advanced trench technology. It offers superior characteristics such as fast switching times, low gate charge, low on-state resistance, and high avalanche ruggedness. This MOSFET is ideal for high-speed switching applications, commonly found in switching power supplies and adaptors.

Product Attributes

Brand: Jingdao Microelectronics co.LTD
Origin: Shandong, China
Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
Certifications: RoHS compliant

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Conditions
Drain-Source Voltage	VDSS	650	V
Gate-Source Voltage	VGSS	30	V
Continuous Drain Current	ID	4	A	TA=25C
Pulsed Drain Current	IDM	16	A	Note 2
Avalanche Energy Single Pulsed	EAS	173	mJ	L = 30mH, IAS = 3.4A, VDD = 50V, RG = 25 , Starting TJ = 25C (Note 3)
Power Dissipation	PD	32	W	TA=25C
Peak Diode Recovery dv/dt	dv/dt	2.1	V/ns	ISD 4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C (Note 4)
Operation Junction Temperature and Storage Temperature	Tj, stg	-55 ~ +150	C
Junction to Ambient Thermal Resistance	RthJA	63	C/W	Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
Junction to Case Thermal Resistance	RthJC	2.6	C/W
Drain-Source Breakdown Voltage	BVDSS	650	V	VGS=0V, ID=0.25mA
Gate-Source Leakage Current	IGSS	100	nA	VGS=-30V,VDS=0V
Drain-Source Leakage Current	IDSS	1	uA	VDS=650V,VGS=0V
Static Drain-Source On-State Resistance	RDS(ON)	2.7		VGS=10V, ID=2.0A
Gate Threshold Voltage	VGS(TH)	2.0	V	VDS=VGS,ID=250uA
Input Capacitance	CISS	560	pF	VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance	COSS	55	pF	VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance	CRSS	10	pF	VDS=25V, VGS=0V, f=1.0MHz
Total Gate Charge	QG	13	nC	VDS=520V,VGS=10V, ID=4A,IG=1mA (NOTE1,2)
Gate-Drain Charge	QGD	4.0	nC	VDS=520V,VGS=10V, ID=4A,IG=1mA (NOTE1,2)
Gate-Source Charge	QGS	4.5	nC	VDS=520V,VGS=10V, ID=4A,IG=1mA (NOTE1,2)
Turn-On Delay Time	tD(ON)	16	ns	VDS=100V,VGS=10V, ID=4A,RG=25 (NOTE1,2)
Turn-On Rise Time	tR	22	ns	VDS=100V,VGS=10V, ID=4A,RG=25 (NOTE1,2)
Turn-Off Delay Time	tD(OFF)	4	ns	VDS=100V,VGS=10V, ID=4A,RG=25 (NOTE1,2)
Turn-Off Fall Time	tF	8	ns	VDS=100V,VGS=10V, ID=4A,RG=25 (NOTE1,2)
Maximum Body-Diode Continuous Current	IS	4	A
Maximum Body-Diode Pulsed Current	ISM	16	A
Drain-Source Diode Forward Voltage	VSD	1.4	V	IS=7A,VGS=0V (Note 1)
Reverse Recovery Time	trr	250	ns	IS=4A,VGS=0V, di/dt=100A/us (Note 1)
Reverse Recovery Charge	Qrr	4.5	uC	IS=4A,VGS=0V, di/dt=100A/us (Note 1)

2108230930_Jingdao-Microelectronics-D4N65_C2875695.pdf

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