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Low voltage N Channel MOSFET ISC 2SK2313 featuring 60A drain current and fast switching speed for DC DC converters

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Low voltage N Channel MOSFET ISC 2SK2313 featuring 60A drain current and fast switching speed for DC DC converters

Drain to Source Voltage : 60V

Current - Continuous Drain(Id) : 60A

RDS(on) : 11mΩ@10V,30A

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 2V

Pd - Power Dissipation : 150W

Description : 60V 60A 11mΩ@10V,30A 2V 150W TO-3PN Single FETs, MOSFETs RoHS

Mfr. Part # : 2SK2313

Model Number : 2SK2313

Package : TO-3PN

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Product Overview

The ISC 2SK2313 is an N-Channel MOSFET transistor designed for low voltage, high-speed applications. It features a high drain current of 60A, a drain-source voltage of 60V (Min), fast switching speed, and is 100% avalanche tested, ensuring robust device performance and reliable operation. This MOSFET is ideal for chopper regulators, DC-DC converters, and motor drive applications.

Product Attributes

Brand: ISC
Trademark: ISC & ISCsemi

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ.	Max	Unit
V_DSS	Drain-Source Voltage (V_GS=0)				60	V
V_GS	Gate-Source Voltage				±20	V
I_D	Drain Current-continuous@ TC=25				60	A
P_tot	Total Dissipation@TC=25				150	W
T_j	Max. Operating Junction Temperature				150
T_stg	Storage Temperature Range		-55	~	150
R_{th j-c}	Thermal Resistance,Junction to Case				0.83	/W
V_(BR)DSS	Drain-Source Breakdown Voltage	V_GS=0; I_D= 10mA	60			V
V_GS(TH)	Gate Threshold Voltage	V_DS=V_GS,I_D=250µA	0.8		2	V
R_DS(ON)	Drain-Source On-stage Resistance	V_GS= 10V; I_D=30A			11	mΩ
I_GSS	Gate Source Leakage Current	V_GS= ±16V; V_DS= 0			±10	µA
I_DSS	Zero Gate Voltage Drain Current	V_DS=60V; V_GS= 0			100	µA
V_SD	Diode Forward Voltage	I_S=30A; V_GS=0			1.2	V

2411220251_ISC-2SK2313_C5128634.pdf

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