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High current ISC IRFB3207ZG MOSFET transistor with 0.5 thermal resistance channel to case specification

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High current ISC IRFB3207ZG MOSFET transistor with 0.5 thermal resistance channel to case specification

Drain to Source Voltage : 75V

Current - Continuous Drain(Id) : 120A

Operating Temperature - : -55℃~+175℃

RDS(on) : 4.1mΩ@10V,75A

Gate Threshold Voltage (Vgs(th)) : 4V

Number : 1 N-channel

Pd - Power Dissipation : 300W

Description : 75V 120A 4.1mΩ@10V,75A 4V 1 N-channel 300W TO-220 Single FETs, MOSFETs RoHS

Mfr. Part # : IRFB3207ZG

Model Number : IRFB3207ZG

Package : TO-220

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Product Overview

The IRFB3207ZG is an N-Channel MOSFET transistor designed for a wide variety of applications. It offers reliable performance with features like 100% avalanche testing and minimum lot-to-lot variations.

Product Attributes

Brand: ISC
Registered Trademark: ISC & ISCsemi
Origin: China (implied by website)

Technical Specifications

Symbol	Parameter	Conditions	Value	Unit
VDSS	Drain-Source Voltage		75	V
VGS	Gate-Source Voltage		±20	V
ID	Drain Current-Continuous	@ TC=25	120	A
IDM	Drain Current-Single Pulsed		670	A
PD	Total Dissipation	@TC=25	300	W
Tj Max.	Operating Junction Temperature		175
Tstg	Storage Temperature		-55~175
Rth(ch-c)	Channel-to-case thermal resistance		0.5	/W
BVDSS	Drain-Source Breakdown Voltage	VGS=0V; ID =250µA	75	V
VGS(th)	Gate Threshold Voltage	VDS=VGS; ID =150µA	2-4	V
RDS(on)	Drain-Source On-Resistance	VGS=10V; ID=75A	4.1	mΩ
IGSS	Gate-Source Leakage Current	VGS=±20V	±0.1	µA
IDSS	Drain-Source Leakage Current	VDS=75V; VGS= 0V	20	µA
VSD	Diode forward voltage	IS=75A, VGS = 0V	1.3	V

2411220722_ISC-IRFB3207ZG_C5128645.pdf

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