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N channel MOSFET Jilin Sino Microelectronics JCS12N65FC 220MF for switch mode power supplies and UPS

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N channel MOSFET Jilin Sino Microelectronics JCS12N65FC 220MF for switch mode power supplies and UPS

Drain to Source Voltage : 650V

Current - Continuous Drain(Id) : 12A

Operating Temperature - : -55℃~+150℃

RDS(on) : 620mΩ@10V

Gate Threshold Voltage (Vgs(th)) : 4V@250uA

Reverse Transfer Capacitance (Crss@Vds) : 5pF

Number : 1 N-channel

Input Capacitance(Ciss) : 1.75nF

Pd - Power Dissipation : 50W

Gate Charge(Qg) : 48.3nC@10V

Description : 650V 12A 620mΩ@10V 4V@250uA 1 N-channel 50W TO-220F-3 Single FETs, MOSFETs RoHS

Mfr. Part # : JCS12N65FC-220MF

Model Number : JCS12N65FC-220MF

Package : TO-220F-3

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Product Overview

The JCS12N65FC is an N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and UPS applications. It features low gate charge, low Crss (typical 5pF), fast switching speed, and is 100% avalanche tested. This RoHS compliant product offers reliable performance in demanding power applications.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd
Origin: China
Certifications: RoHS
Halogen Free: No

Technical Specifications

Parameter	Symbol	Value	Unit	Tests Conditions	Min	Typ	Max
Absolute Maximum Ratings	VDSS	650	V
	ID (T=25)	12*	A
	ID (T=100)	7.6*	A
	IDM	48*	A	(note 1)
	VGSS	30	V
Avalanche Energy	EAS	880	mJ	(note 2)
	IAR	12.0	A	(note 1)
	EAR	25	mJ	(note 1)
Power Dissipation	PD	50	W	TC=25
Operating and Storage Temperature Range	TJ, TSTG	-55+150
Maximum Lead Temperature for Soldering Purposes	TL	300
Off-Characteristics	BVDSS	650	V	ID=250A, VGS=0V	650
	IDSS	1	A	VDS=650V, VGS=0V, TC=25			10
	IDSS	100	A	VDS=520V, TC=125			100
On-Characteristics	VGS(th)	2	V	VDS = VGS , ID=250A	2	3.0	4
On-Characteristics	RDS(ON)	0.52		VGS =10V , ID=6.0A		0.52	0.62
Dynamic Characteristics	Ciss	1750	pF	VDS=25V, VGS =0V, f=1.0MHZ		1750
	Coss	185	pF			185
	Crss	5	pF			5
Thermal Characteristic	Rth(j-c)	2.5	/W			2.5
Switching Characteristics	td(on)	48.5	ns	VDD=325V,ID=12A,RG=25 VGS=10V note 45		37.1	48.5
	tr	90.5	ns			69.6	90.5
	td(off)	99.1	ns			75.2	99.1
	tf	67.2	ns			49.6	67.2
Total Gate Charge	Qg	48.3	nC	VDS =480V , ID=12A VGS =10Vnote 45		33.1	48.3
Drain-Source Diode Characteristics	IS	12	A				12
	ISM	48	A				48
	VSD	1.39	V	VGS=0V, IS=12A			1.39
Reverse recovery time	trr	427	ns	VGS=0V, IS=12A dIF/dt=100A/s (note 4)			427

2411201841_Jilin-Sino-Microelectronics-JCS12N65FC-220MF_C272587.pdf

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