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Power MOSFET Transistor ISC IRFP4110 N Channel Type for High Current and High Frequency Applications

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Power MOSFET Transistor ISC IRFP4110 N Channel Type for High Current and High Frequency Applications

Drain to Source Voltage : 100V

Current - Continuous Drain(Id) : 120A

RDS(on) : 4.5mΩ@10V

Operating Temperature - : -55℃~+175℃

Gate Threshold Voltage (Vgs(th)) : 4V@250uA

Type : N-Channel

Pd - Power Dissipation : 370W

Description : 100V 120A 4.5mΩ@10V 4V@250uA 370W TO-247 Single FETs, MOSFETs RoHS

Mfr. Part # : IRFP4110

Model Number : IRFP4110

Package : TO-247

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Product Overview

The INCHANGE Semiconductor IRFP4110/IIRFP4110 is an N-Channel MOSFET Transistor designed for high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, high-speed power switching, and hard-switched and high-frequency circuits. It features a low static drain-source on-resistance (RDS(on)4.5m), enhancement mode operation, and 100% avalanche tested for robust performance.

Product Attributes

Brand: INCHANGE Semiconductor
Registered Trademark: isc, iscsemi
Product Series: N-Channel MOSFET Transistor
Model: IRFP4110, IIRFP4110

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VDSS	Drain-Source Voltage				100	V
VGS	Gate-Source Voltage				20	V
ID	Drain Current-Continuous				120	A
IDM	Drain Current-Single Pulsed				670	A
PD	Total Dissipation @TC=25				370	W
Tj Max.	Operating Junction Temperature				175
Tstg	Storage Temperature		-55		175
Rth(j-c)	Channel-to-case thermal resistance			0.402		/W
Rth(j-a)	Channel-to-ambient thermal resistance			40		/W
BVDSS	Drain-Source Breakdown Voltage	VGS=0V; ID=250A	100			V
VGS(th)	Gate Threshold Voltage	VDS=VGS; ID=250A	2.0		4.0	V
RDS(on)	Drain-Source On-Resistance	VGS=10V; ID=75A			4.5	m
IGSS	Gate-Source Leakage Current	VGS= 20V		0.1		A
IDSS	Drain-Source Leakage Current	VDS=100V; VGS= 0V			20	A
VSD	Diode forward voltage	IS=75A, VGS = 0V			1.3	V

2411220608_ISC-IRFP4110_C2976490.pdf

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