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switching N channel MOSFET Jilin Sino Microelectronics JCS730RC with 1 ohm max Rds on and 5.5A ID rating

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switching N channel MOSFET Jilin Sino Microelectronics JCS730RC with 1 ohm max Rds on and 5.5A ID rating

Drain to Source Voltage : 400V

Current - Continuous Drain(Id) : 5.5A

Operating Temperature - : -55℃~+150℃

RDS(on) : 1Ω@10V

Gate Threshold Voltage (Vgs(th)) : 4V@250uA

Reverse Transfer Capacitance (Crss@Vds) : 5.8pF

Number : -

Output Capacitance(Coss) : 104pF

Input Capacitance(Ciss) : 698pF

Pd - Power Dissipation : 5.5W

Gate Charge(Qg) : 17nC@10V

Description : 400V 5.5A 5.5W Surface Mount DPAK

Mfr. Part # : JCS730RC

Model Number : JCS730RC

Package : DPAK

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N-CHANNEL MOSFET JCS730C

The JCS730C is an N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and LED power supplies. It features low gate charge, low Crss (typical 4.5pF), fast switching speed, 100% avalanche tested, and improved dv/dt capability. This product is RoHS compliant.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd
Certifications: RoHS

Technical Specifications

Order Codes	Marking	Package	Main Characteristics (ID, VDSS, Rds(on)-max, Qg-typ)
JCS730VC-V-B / JCS730VC-V-BR	N/A	IPAK	ID: 5.5A, VDSS: 400V, Rds(on)-max (@Vgs=10V): 1.0, Qg-typ: 14nC
JCS730RC-R-B / JCS730RC-R-BR / JCS730RC-R-A / JCS730RC-R-AR	JCS730RC	DPAK	ID: 5.5A, VDSS: 400V, Rds(on)-max (@Vgs=10V): 1.0, Qg-typ: 14nC
JCS730SC-S-B / JCS730SC-S-BR / JCS730SC-S-A / JCS730SC-S-AR	JCS730SC	TO-263	ID: 5.5A, VDSS: 400V, Rds(on)-max (@Vgs=10V): 1.0, Qg-typ: 14nC
JCS730BC-B-B / JCS730BC-B-BR	JCS730BC	TO-262	ID: 5.5A, VDSS: 400V, Rds(on)-max (@Vgs=10V): 1.0, Qg-typ: 14nC
JCS730CC-C-B / JCS730CC-C-BR	JCS730CC	TO-220C	ID: 5.5A, VDSS: 400V, Rds(on)-max (@Vgs=10V): 1.0, Qg-typ: 14nC
JCS730FC-F-B / JCS730FC-F-BR	JCS730FC	TO-220MF	ID: 5.5A, VDSS: 400V, Rds(on)-max (@Vgs=10V): 1.0, Qg-typ: 14nC

Absolute Maximum Ratings

Parameter	Symbol	JCS730 VC/RC	JCS730SC /BC/CC	JCS730FC	Unit
Drain-Source Voltage	VDSS	400			V
Drain Current -continuous (Tc=25)	ID	5.5	5.5*	5.5*	A
Drain Current -continuous (Tc=100)	ID	3.5	3.5*	3.5*	A
Drain Current - pulse (note 1)	IDM	22	22*	22*	A
Gate-Source Voltage	VGSS	30			V
Single Pulsed Avalanche Energy (note 2)	EAS	328			mJ
Avalanche Current (note 1)	IAR	5.5			A
Repetitive Avalanche Energy (note 1)	EAR	7.3			mJ
Peak Diode Recovery dv/dt (note 3)	dv/dt	5.5			V/ns
Power Dissipation (TC=25)	PD	59	73	38	W
Power Dissipation -Derate above 25	-	0.48	0.58	0.3	W/
Operating and Storage Temperature Range	TJTSTG	-55+150
Maximum Lead Temperature for Soldering Purposes	TL	300

Electrical Characteristics

Parameter	Symbol	Tests conditions	Min	Typ	Max	Unit
Off Characteristics
Drain-Source Voltage	BVDSS	ID=250A, VGS=0V	400	-	-	V
Breakdown Voltage Temperature Coefficient	BVDSS/ TJ	ID=250A, referenced to 25	-	0.4	-	V/
Zero Gate Voltage Drain Current	IDSS	VDS=400V,VGS=0V, TC=25	-	-	10	A
Zero Gate Voltage Drain Current	IDSS	VDS=320V, TC=125	-	-	100	A
Gate-body leakage current, forward	IGSSF	VDS=0V, VGS =30V	-	-	100	nA
Gate-body leakage current, reverse	IGSSR	VDS=0V, VGS =-30V	-	-	-100	nA
On-Characteristics
Gate Threshold Voltage	VGS(th)	VDS = VGS , ID=250A	2.0	-	4.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V , ID=2.75A	-	0.85	1.0
Forward Transconductance	gfs	VDS = 40V, ID=2.75Anote 4	-	4.95	-	S
Dynamic Characteristics
Input capacitance	Ciss	VDS=25V, VGS =0V, f=1.0MHZ	-	537.4	698	pF
Output capacitance	Coss	VDS=25V, VGS =0V, f=1.0MHZ	-	80.6	104	pF
Reverse transfer capacitance	Crss	VDS=25V, VGS =0V, f=1.0MHZ	-	4.5	5.8	pF
Switching Characteristics
Turn-On delay time	td(on)	VDD=200V,ID=5.5A,RG=25 note 45	-	17	40	ns
Turn-On rise time	tr	VDD=200V,ID=5.5A,RG=25 note 45	-	20	120	ns
Turn-Off delay time	td(off)	VDD=200V,ID=5.5A,RG=25 note 45	-	45	180	ns
Turn-Off Fall time	tf	VDD=200V,ID=5.5A,RG=25 note 45	-	18	110	ns
Total Gate Charge	Qg	VDS =320V , ID=5.5A VGS =10V note 45	-	14	17	nC
Gate-Source charge	Qgs	VDS =320V , ID=5.5A VGS =10V note 45	-	3.1	-	nC
Gate-Drain charge	Qgd	VDS =320V , ID=5.5A VGS =10V note 45	-	5.4	-	nC
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain -Source Diode Forward Current	IS	-	-	5.5	A
Maximum Pulsed Drain-Source Diode Forward Current	ISM	-	-	22	A
Drain-Source Diode Forward Voltage	VSD	VGS=0V, IS=5.5A	-	-	1.5	V
Reverse recovery time	trr	VGS=0V, IS=5.5A dIF/dt=100A/s (note 4)	-	278	-	ns
Reverse recovery charge	Qrr	VGS=0V, IS=5.5A dIF/dt=100A/s (note 4)	-	1.13	-	C

Thermal Characteristics

Parameter	Symbol	JCS730V/R	JCS730S/B/C	JCS730F	Unit
Thermal Resistance, Junction to Case	Rth(j-c)	2.05	1.71	3.31	/W
Thermal Resistance, Junction to Ambient	Rth(j-A)	110	62.5	62.5	/W

2409280101_Jilin-Sino-Microelectronics-JCS730RC_C2693243.pdf

switching N channel MOSFET Jilin Sino Microelectronics JCS730RC with 1 ohm max Rds on and 5.5A ID rating Images

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