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N channel MOSFET Jilin Sino Microelectronics JCS4N70FC 220MF featuring 100 percent avalanche testing

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N channel MOSFET Jilin Sino Microelectronics JCS4N70FC 220MF featuring 100 percent avalanche testing

Drain to Source Voltage : 700V

Current - Continuous Drain(Id) : 4A

Operating Temperature - : -55℃~+150℃

RDS(on) : 2.8Ω@10V

Gate Threshold Voltage (Vgs(th)) : 4V@250uA

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 17pF@25V

Number : 1 N-channel

Output Capacitance(Coss) : 92pF

Input Capacitance(Ciss) : 950pF

Pd - Power Dissipation : 33W

Gate Charge(Qg) : 20nC@10V

Description : N-Channel 700V 4A 33W Through Hole TO-220F-3

Mfr. Part # : JCS4N70FC-220MF

Model Number : JCS4N70FC-220MF

Package : TO-220F-3

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Product Overview

The JCS4N70C is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS applications. It features low gate charge, fast switching speeds, and improved dv/dt capability, with 100% avalanche testing for reliability. This RoHS-compliant product is available in various packages.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd.
Certifications: RoHS, Halogen Free (optional)

Technical Specifications

Order Code	Marking	Package	Halogen Free	Device Weight (typ)	ID (A)	VDSS (V)	RDS(ON)-max (@VGS=10V) ()	Qg-typ (nC)
JCS4N70VC-O-V-N-B	JCS4N70V	IPAK	NO	0.35 g	4.0	700	2.8	16
JCS4N70VC-R-V-N-B	JCS4N70V	IPAK	YES	0.35 g	4.0	700	2.8	16
JCS4N70VC-R-VN2-N-B	JCS4N70V	TO-251N-S2	YES	0.35 g	4.0	700	2.8	16
JCS4N70RC-O-R-N-B	JCS4N70R	DPAK	NO	0.30 g	4.0	700	2.8	16
JCS4N70RC-O-R-N-A	JCS4N70R	DPAK	NO	0.30 g	4.0	700	2.8	16
JCS4N70MFC-O-MF-N-B	JCS4N70MF	TO-126F	NO	1.50 g	4.0	700	2.8	16
JCS4N70SC-O-S-N-B	JCS4N70S	TO-263	NO	1.37 g	4.0	700	2.8	16
JCS4N70SC-O-S-N-A	JCS4N70S	TO-263	NO	1.37 g	4.0	700	2.8	16
JCS4N70BC-O-B-N-B	JCS4N70B	TO-262	NO	1.71 g	4.0	700	2.8	16
JCS4N70CC-O-C-N-B	JCS4N70C	TO-220C	NO	2.15 g	4.0	700	2.8	16
JCS4N70FC-O-F-N-B	JCS4N70F	TO-220MF	NO	2.20 g	4.0	700	2.8	16
JCS4N70FC-O-F1-N-B	JCS4N70F	TO-220MF-K1	NO	1.78 g	4.0	700	2.8	16
JCS4N70FC-O-F2-N-B	JCS4N70F	TO-220MF-K2	NO	1.78 g	4.0	700	2.8	16

Absolute Maximum Ratings

Parameter	Symbol	Value	Unit	JCS4N70MFC	JCS4N70VC/RC	JCS4N70S C/BC/CC	JCS4N70FC
Drain-Source Voltage	VDSS	700	V
Drain Current -continuous (TC=25)	ID	4.0	A
Drain Current -continuous (TC=100)	ID	2.5*	A
Drain Current - pulse (note 1)	IDM	16*	A
Gate-Source Voltage	VGSS	30	V
Single Pulsed Avalanche Energy (note 2)	EAS	265	mJ
Avalanche Current (note 1)	IAR	4.0	A
Repetitive Avalanche Current (note 1)	EAR	11.0	mJ
Peak Diode Recovery dv/dt (note 3)	dv/dt	5.0	V/ns
Power Dissipation (TC=25)	PD	26 / 51 / 100 / 33	W	26	51	100	33
Power Dissipation -Derate above 25		0.21 / 0.39 / 0.80 / 0.26	W/	0.21	0.39	0.80	0.26
Operating and Storage Temperature Range	TJ, TSTG	-55+150
Maximum Lead Temperature for Soldering Purposes	TL	300

Electrical Characteristics

Parameter	Symbol	Tests conditions	Min	Typ	Max	Units
Off Characteristics
Drain-Source Voltage	BVDSS	ID=250A, VGS=0V	700	-	-	V
Breakdown Voltage Temperature Coefficient	BVDSS/ TJ	ID=250A, referenced to 25	-	0.66	-	V/
Zero Gate Voltage Drain Current	IDSS	VDS=700V,VGS=0V, TC=25	-	-	10	A
Zero Gate Voltage Drain Current	IDSS	VDS=560V, TC=125	-	-	100	A
Gate-body leakage current, forward	IGSSF	VDS=0V, VGS =30V	-	-	100	nA
Gate-body leakage current, reverse	IGSSR	VDS=0V, VGS =-30V	-	-	-100	nA
On-Characteristics
Gate Threshold Voltage	VGS(th)	VDS = VGS , ID=250A	2.0	-	4.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V , ID=2A	-	2.6	2.8
Forward Transconductance	gfs	VDS = 40V , ID=2A (note 4)	-	3.6	-	S
Dynamic Characteristics
Input capacitance	Ciss	VDS=25V, VGS =0V, f=1.0MHZ	-	790	950	pF
Output capacitance	Coss		-	67	92	pF
Reverse transfer capacitance	Crss		-	14	17	pF
Switching Characteristics
Turn-On delay time	td(on)	VDD=350V,ID=4A,RG=25 (note 4,5)	-	30	50	ns
Turn-On rise time	tr		-	65	110	ns
Turn-Off delay time	td(off)		-	50	130	ns
Turn-Off Fall time	tf		-	45	90	ns
Total Gate Charge	Qg	VDS =560V , ID=4A VGS =10V (note 4,5)	-	16	20	nC
Gate-Source charge	Qgs		-	2.0	-	nC
Gate-Drain charge	Qgd		-	7.0	-	nC
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain -Source Diode Forward Current	IS		-	-	4	A
Maximum Pulsed Drain-Source Diode Forward Current	ISM		-	-	16	A
Drain-Source Diode Forward Voltage	VSD	VGS=0V, IS=4.0A	-	-	1.4	V
Reverse recovery time	trr	VGS=0V, IS=4.0A dIF/dt=100A/s (note 4)	-	340	-	ns
Reverse recovery charge	Qrr		-	2.65	-	C

Thermal Characteristics

Parameter	Symbol	Max	Unit	JCS4N70MFC	JCS4N70VC/RC	JCS4N70 SC/BC/CC	JCS4N70 FC
Thermal Resistance, Junction to Case	Rth(j-c)	4.8 / 2.50 / 1.25 / 3.79	/W	4.8	2.50	1.25	3.79
Thermal Resistance, Junction to Ambient	Rth(j-A)	110 / 83 / 62.5 / 62.5	/W	110	83	62.5	62.5

2411201842_Jilin-Sino-Microelectronics-JCS4N70FC-220MF_C272581.pdf

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