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P Channel MOSFET JingYang TPM2020UX Designed for Load Switch and Battery Protection Applications

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P Channel MOSFET JingYang TPM2020UX Designed for Load Switch and Battery Protection Applications

Drain to Source Voltage : 20V

Current - Continuous Drain(Id) : 13A

RDS(on) : 14mΩ@4.5V

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 400mV

Type : P-Channel

Reverse Transfer Capacitance (Crss@Vds) : 362pF

Pd - Power Dissipation : 3W

Input Capacitance(Ciss) : 2.05nF@10V

Gate Charge(Qg) : 30nC@10V

Description : P-Channel 20V 13A 3W Surface Mount SOP-8

Mfr. Part # : TPM2020UX

Model Number : TPM2020UX

Package : SOP-8

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Product Overview

P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). Designed for high-speed switching applications including battery protection, load switch, and power management.

Product Attributes

Brand: JY Electronics (implied from website)
Origin: China (implied from website)
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	BVDSS	VGS= 0V, ID=-250A	-20			V
Zero Gate Voltage Drain Current	IDSS	VDS=-20V,VGS=0V,TC=25			-1	A
Gate-Body Leakage Current	IGSS	VGS= 10V, VDS=0V			100	nA
Gate Threshold Voltage	VGS(th)	VDS= VGS, ID=-250A	-0.4	-0.62	-1.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS= -4.5V, ID=-10A		14	18	m
Static Drain-Source On-Resistance	RDS(ON)	VGS= -2.5V, ID=-6.5A		17	22	V
Static Drain-Source On-Resistance	RDS(ON)	VGS= -1.8V, ID=-4.0A		21	31
Diode Forward Voltage	VSD	IS=-13A,VGS=0V		-0.8	-1.2	V
Maximum Body-Diode Continuous Current	IS				-13	A
Input Capacitance	Ciss	VDS=-10V,VGS=0V,f=1MHZ		2050		pF
Output Capacitance	Coss	VDS=-10V,VGS=0V,f=1MHZ		411
Reverse Transfer Capacitance	Crss	VDS=-10V,VGS=0V,f=1MHZ		362
Total Gate Charge	Qg	VGS=-10V,VDS=-15V,ID=-9.1A		30		nC
Gate Source Charge	Qgs	VGS=-10V,VDS=-15V,ID=-9.1A		5.3
Gate Drain Charge	Qg d	VGS=-10V,VDS=-15V,ID=-9.1A		7.6
Turn-on Delay Time	tD(on)	VGS=-10V,VDS=-15V, ID=-6A, RGEN=2.5		14		ns
Turn-on Rise Time	tr	VGS=-10V,VDS=-15V, ID=-6A, RGEN=2.5		20
Turn-off Delay Time	tD(off)	VGS=-10V,VDS=-15V, ID=-6A, RGEN=2.5		95
Turn-off Fall Time	tf	VGS=-10V,VDS=-15V, ID=-6A, RGEN=2.5		65
Drain-source Voltage	VDS		-20			V
Gate-source Voltage	VGS		10			V
Drain Current (TA=25 @ Steady State)	ID				-13	A
Drain Current (TA=70 @ Steady State)	ID				-10.4	A
Pulsed Drain Current	IDM				-55	A
Total Power Dissipation (@ TA=25)	PD				3.0	W
Junction-to-Ambient Thermal Resistance (@ Steady State)	RJA			42		/ W
Junction and Storage Temperature Range	TJ ,TSTG		-55		+150

2405091033_JingYang-TPM2020UX_C5364040.pdf

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