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Fast switching transistor Jilin Sino Microelectronics JCS4N90VH 251 N channel enhancement mode device

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Fast switching transistor Jilin Sino Microelectronics JCS4N90VH 251 N channel enhancement mode device

Drain to Source Voltage : 900V

Current - Continuous Drain(Id) : 4A

Operating Temperature - : -55℃~+150℃

RDS(on) : 5.5Ω@10V

Gate Threshold Voltage (Vgs(th)) : 4V@250uA

Reverse Transfer Capacitance (Crss@Vds) : 15pF

Number : 1 N-channel

Input Capacitance(Ciss) : 1.3nF

Pd - Power Dissipation : 52W

Gate Charge(Qg) : 15nC@10V

Description : 900V 4A 5.5Ω@10V 4V@250uA 1 N-channel 52W TO-251 Single FETs, MOSFETs RoHS

Mfr. Part # : JCS4N90VH-251

Model Number : JCS4N90VH-251

Package : TO-251

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Product Overview

The JCS4N90H is a N-channel enhancement mode field-effect transistor designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd
Certifications: Halogen Free, RoHS

Technical Specifications

Order Code	Marking	Package	Halogen Free	Packaging	Device Weight (typ)	VDSS (V)	ID (A)	RDS(ON)_max (VGS=10V) ()	Qg-typ (nC)
JCS4N90FH-O-F2-N-B	JCS4N90FH	TO-220MF-K2	NO	Tube	1.78 g	900	4	5.5	7
JCS4N90FH-R-F2-N-B	JCS4N90FH	TO-220MF-K2	YES	Tube	1.78 g	900	4	5.5	7
JCS4N90RH-O-R-N-A	JCS4N90RH	DPAK	NO	Reel	0.30 g	900	4	5.5	7
JCS4N90RH-R-R-N-A	JCS4N90RH	DPAK	YES	Reel	0.30 g	900	4	5.5	7
JCS4N90RH-O-R-N-B	JCS4N90RH	DPAK	NO	Tube	0.30 g	900	4	5.5	7
JCS4N90RH-R-R-N-B	JCS4N90RH	DPAK	YES	Tube	0.30 g	900	4	5.5	7
JCS4N90VH-O-V-N-B	JCS4N90VH	TO-251	NO	Tube	0.35 g	900	4	5.5	7
JCS4N90VH-R-V-N-B	JCS4N90VH	TO-251	YES	Tube	0.35 g	900	4	5.5	7

2411201842_Jilin-Sino-Microelectronics-JCS4N90VH-251_C272594.pdf

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