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Jilin Sino Microelectronics JCS20N65FH 220MF N channel transistor avalanche tested for power switching

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Jilin Sino Microelectronics JCS20N65FH 220MF N channel transistor avalanche tested for power switching

Configuration : -

Drain to Source Voltage : 650V

Current - Continuous Drain(Id) : 20A

Operating Temperature - : -

RDS(on) : 500mΩ@10V

Gate Threshold Voltage (Vgs(th)) : 5V@250uA

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 11pF@25V

Number : 1 N-channel

Output Capacitance(Coss) : 250pF

Input Capacitance(Ciss) : 4nF@25V

Pd - Power Dissipation : 62.2W

Gate Charge(Qg) : 80nC@10V

Description : N-Channel 650V 20A 62.2W Through Hole TO-220F-3

Mfr. Part # : JCS20N65FH-220MF

Model Number : JCS20N65FH-220MF

Package : TO-220F-3

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Product Overview

The JCS20N65H is an N-channel enhancement mode field-effect transistor designed for high-frequency switching power supplies, electronic ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd.
Certifications: RoHS

Technical Specifications

Order Codes	Marking	Package	ID (A)	VDSS (V)	Rds(on)-max (@Vgs=10V) ()	Qg-typ (nC)
JCS20N65FH-F-B / JCS20N65FH-F-BR	N/A	TO-220MF	20	650	0.5	45
JCS20N65WH-GE-B / JCS20N65WH-GE-BR	N/A	TO-247	20	650	0.5	45

Parameter	Symbol	Value	Unit	Test Conditions
Drain-Source Voltage	VDSS	650	V	-
Continuous Drain Current	ID	20 (T=25), 12.5 (T=100)	A	-
Pulsed Drain Current	IDM	80	A	Note 1
Gate-Source Voltage	VGSS	30	V	-
Single Pulsed Avalanche Energy	EAS	108	mJ	Note 2
Avalanche Current	IAR	20	A	Note 1
Repetitive Avalanche Energy	EAR	20.7	mJ	Note 1
Peak Diode Recovery dv/dt	dv/dt	50	V/ns	Note 3
Power Dissipation	PD	500 (TC=25)	W	-Derate above 25: 4.0 W/
Operating and Storage Temperature Range	TJ, TSTG	-55+150		-
Maximum Lead Temperature for Soldering	TL	300		-
Drain-Source Breakdown Voltage	BVDSS	650	V	ID=250A, VGS=0V
Breakdown Voltage Temperature Coefficient	BVDSS/TJ	0.5	V/	ID=250A, referenced to 25
Zero Gate Voltage Drain Current	IDSS	10 (VDS=650V,VGS=0V, TC=25), 100 (VDS=520V, TC=125)	A	-
Gate-body leakage current, forward	IGSSF	100	nA	VDS=0V, VGS =30V
Gate-body leakage current, reverse	IGSSR	-100	nA	VDS=0V, VGS =-30V
Gate Threshold Voltage	VGS(th)	3.0 - 5.0	V	VDS = VGS , ID=250A
Static Drain-Source On-Resistance	RDS(ON)	0.44 - 0.5		VGS =10V , ID=10A
Input capacitance	Ciss	2550 - 4000	pF	VDS=25V, VGS =0V, f=1.0MHZ
Output capacitance	Coss	250	pF	-
Reverse transfer capacitance	Crss	11	pF	-
Turn-On delay time	td(on)	56 - 128	ns	VDD=300V,ID=20A,RG=25 (note 4, 5)
Turn-On rise time	tr	140 - 270	ns	-
Turn-Off delay time	td(off)	80 - 350	ns	-
Turn-Off Fall time	tf	50 - 120	ns	-
Total Gate Charge	Qg	45 - 80	nC	VDS =520V , ID=20A VGS =10V (note 4, 5)
Gate-Source charge	Qgs	15.0	nC	-
Gate-Drain charge	Qgd	17	nC	-
Maximum Continuous Drain -Source Diode Forward Current	IS	20	A	-
Maximum Pulsed Drain-Source Diode Forward Current	ISM	80	A	-
Drain-Source Diode Forward Voltage	VSD	1.45	V	VGS=0V, IS=20A
Reverse recovery time	trr	660	ns	VGS=0V, IS=20A dIF/dt=100A/s (note 4)
Reverse recovery charge	Qrr	9.3	C	-
Thermal Resistance, Junction to Case	Rth(j-c)	0.25 (JCS20N65WH), 2.01 (JCS20N65FH)	/W	-
Thermal Resistance, Junction to Ambient	Rth(j-A)	29.8 (JCS20N65WH), 39.7 (JCS20N65FH)	/W	-

2411201842_Jilin-Sino-Microelectronics-JCS20N65FH-220MF_C272565.pdf

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