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Jilin Sino Microelectronics JCS3AN150AA N channel MOSFET with low gate charge and fast switching speed

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Jilin Sino Microelectronics JCS3AN150AA N channel MOSFET with low gate charge and fast switching speed

Drain to Source Voltage : 1.5kV

Current - Continuous Drain(Id) : 3A

Operating Temperature - : -55℃~+150℃

RDS(on) : 8Ω@10V

Gate Threshold Voltage (Vgs(th)) : 5V@250uA

Reverse Transfer Capacitance (Crss@Vds) : 29pF

Number : -

Output Capacitance(Coss) : 127pF

Input Capacitance(Ciss) : 824pF

Pd - Power Dissipation : 69W

Gate Charge(Qg) : 37nC@10V

Description : 1.5kV 3A 8Ω@10V 5V@250uA 69W TO-3P Single FETs, MOSFETs RoHS

Mfr. Part # : JCS3AN150AA

Model Number : JCS3AN150AA

Package : TO-3P

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Product Overview

The JCS3AN150A is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic lamp ballasts, and UPS systems. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd
Certifications: RoHS

Technical Specifications

Order Codes	Marking	Package	ID (A)	VDSS (V)	Rdson-max (@Vgs=10V) ()	Qg-typ (nC)
JCS3AN150CA-C-B / JCS3AN150CA-C-BR	N/A	TO-220C	3	1500	8.0	37
JCS3AN150FA-F-B / JCS3AN150FA-F-BR	N/A	TO-220MF	3	1500	8.0	37
JCS3AN150AA-A-B / JCS3AN150AA-A-BR	N/A	TO-3P(H)IS	3	1500	8.0	37
JCS3AN150WA-W-B / JCS3AN150WA-W-BR	N/A	TO-247	3	1500	8.0	37
JCS3AN150SA-S-BR / JCS3AN150SA-S-AR	N/A	TO-263	3	1500	8.0	37
JCS3AN150BA-B-BR	N/A	TO-262	3	1500	8.0	37

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	BVDSS	ID=250A, VGS=0V	1500	-	-	V
Breakdown Voltage Temperature Coefficient	BVDSS /TJ	ID=250A, referenced to 25	-	0.5	-	V/
Zero Gate Voltage Drain Current	IDSS	VDS=1500V, VGS=0V, TC=25	-	-	10	A
Zero Gate Voltage Drain Current	IDSS	VDS=1500V, TC=125	-	-	500	A
Gate Threshold Voltage	VGS(th)	VDS = VGS , ID=250A	3.0	-	5.0	V
Forward Transconductance	gfs	VDS = 30V , ID=3note 3	-	5.8	-	S
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V , ID=1.5A	-	6.3	8
Input capacitance	Ciss	VDS=25V, VGS =0V, f=1.0MHZ	-	824	-	pF
Output capacitance	Coss	VDS=25V, VGS =0V, f=1.0MHZ	-	127	-	pF
Reverse transfer capacitance	Crss	VDS=25V, VGS =0V, f=1.0MHZ	-	29	-	pF
Total Gate Charge	Qg	VDS =750V , ID=3A VGS =10Vnote 34	-	37	-	nC
Gate-Source charge	Qgs	VDS =750V , ID=3A VGS =10Vnote 34	-	6	-	nC
Gate-Drain charge	Qgd	VDS =750V , ID=3A VGS =10Vnote 34	-	22	-	nC
Forward on voltage	VSD	VGS=0V, IS=3A	-	1.6	-	V
Reverse recovery time	trr	VGS=0VIS=3A dIF/dt=100A/s (note 3)	-	376	-	ns
Reverse recovery charge	Qrr	VGS=0VIS=3A dIF/dt=100A/s (note 3)	-	2.1	-	C

2411201840_Jilin-Sino-Microelectronics-JCS3AN150AA_C2693254.pdf

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