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Drain to Source Voltage : 80V
Current - Continuous Drain(Id) : 160A
Operating Temperature - : -55℃~+175℃
RDS(on) : 5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)) : 4V@250uA
Reverse Transfer Capacitance (Crss@Vds) : 316pF
Number : 1 N-channel
Input Capacitance(Ciss) : 6.6nF@25V
Pd - Power Dissipation : 250W
Gate Charge(Qg) : 133nC
Description : N-Channel 80V 160A 250W Through Hole TO-220
Mfr. Part # : JCS160N08I
Model Number : JCS160N08I
Package : TO-220
The JCS160N08I is an N-channel enhancement mode MOSFET designed for high-power applications. It features low gate charge, low Rdson (typical 4.3m), fast switching speeds, and improved dv/dt capability. This product is 100% avalanche tested and RoHS compliant. It is suitable for high power DC/DC converters, switch mode power supplies, DC motor control, automotive applications, and uninterruptible power supplies.
| Order Code | Marking | Package | VDSS (V) | ID (A) @ TC=25 | RDS(ON) (m) @ VGS=10V, ID=40A | Qg-typ (nC) | EAS (mJ) |
| JCS160N08I-C-B | JCS160N08I | TO-220C | 80 | 160* | 5.5 (max) / 4.3 (typ) | 133 | 1200 |
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Jilin Sino Microelectronics JCS160N08I N Channel MOSFET Featuring Fast Switching and Low Gate Charge Images |