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Silicon planar switching diode IDCHIP 1N4148W with 400 milliwatt power dissipation in SOD123 package

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Silicon planar switching diode IDCHIP 1N4148W with 400 milliwatt power dissipation in SOD123 package

Non-Repetitive Peak Forward Surge Current : 2A

Reverse Leakage Current (Ir) : 1uA@75V

Reverse Recovery Time (trr) : 4ns

Diode Configuration : Independent

Operating Junction Temperature Range : -

Voltage - DC Reverse (Vr) (Max) : 75V

Pd - Power Dissipation : 400mW

Voltage - Forward(Vf@If) : 1.25V@150mA

Current - Rectified : 150mA

Description : Diode Independent 75V 150mA Surface Mount SOD-123

Mfr. Part # : 1N4148W

Model Number : 1N4148W

Package : SOD-123

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Product Overview

This silicon epitaxial planar switching diode is available in a SOD-123 package, offering fast switching capabilities. It is also available in other case styles including DO-35 (1N4148W), MiniMELF (4148), and MicroMELF (4148).

Product Attributes

Brand: Indreamchip ()
Origin: China
Material: Silicon Epitaxial Planar

Technical Specifications

Parameter	Symbol	Value	Unit	Min	Max	Notes
Peak Reverse Voltage	VRM	100	V
Reverse Voltage	VR	75	V
Average Rectified Forward Current	IF(AV)	150	mA
Non-repetitive Peak Forward Surge Current	IFSM	2	A			t = 1 s
Power Dissipation	Ptot	400	mW
Thermal Resistance from Junction to Ambient Air	RJA	312	C/W
Junction Temperature	Tj	150	C
Storage Temperature Range	Tstg	-65 to +150	C
Reverse Breakdown Voltage	V(BR)R	75	V	75		at IR = 1 A
Forward Voltage	VF		V			at IF = 1 mA, 0.715 V; at IF = 10 mA, 0.855 V; at IF = 50 mA, 1 V; at IF = 150 mA, 1.25 V
Peak Reverse Current	IR		A			at VR = 75 V, 1 A; at VR = 20 V, 25 nA; at VR = 75 V, TJ = 150 C, 50 A; at VR = 25 V, TJ = 150 C, 30 A
Total Capacitance	CT	2	pF			at VR = 0 V, f = 1 MHz
Reverse Recovery Time	trr	4	ns			at Irr = 0.1 X IR, IF = IR = 10 mA, RL = 100

2410121231_IDCHIP-1N4148W_C2848200.pdf

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