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Trenched P channel MOSFET JingYang TPM2030JX optimized for synchronous buck converter and low RDS

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Trenched P channel MOSFET JingYang TPM2030JX optimized for synchronous buck converter and low RDS

Drain to Source Voltage : 30V

Current - Continuous Drain(Id) : 10A

Operating Temperature - : -55℃~+150℃

RDS(on) : 21mΩ@10V,8A

Gate Threshold Voltage (Vgs(th)) : -

Reverse Transfer Capacitance (Crss@Vds) : 75pF@15V

Input Capacitance(Ciss) : 530pF@15V

Pd - Power Dissipation : 2.8W

Gate Charge(Qg) : 12nC@10V

Description : 30V 10A 2.8W Surface Mount DFN2X2-6L

Mfr. Part # : TPM2030JX

Model Number : TPM2030JX

Package : DFN2X2-6L

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Product Overview

The TPM2030JX is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements.

Product Attributes

Brand: JY Electronics (implied by website)
Origin: China (implied by website)
Certifications: RoHS, Green Product

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	VDSS				-30	V
Drain-Source Voltage	VDSS
Gate Source Voltage	VGSS				±20	V
Gate Source Voltage	VGSS
Drain Current (Continuous)	ID	*AC TA=25°C			-10	A
Drain Current (Continuous)	ID	TA=100°C			-8
Drain Current (Pulse)	IDM	*B			-30	A
Power Dissipation	PD	TA=25°C			2.8	W
Operating Temperature/Storage Temperature	TJ/TSTG		-55		150	°C
Thermal Resistance, Junction-to-Ambient	RθJA	A		50		°C/W
Static Drain-Source Breakdown Voltage	V(BR)DSS	VGS=0V, ID=-250uA	-30			V
Zero Gate Voltage Drain Current	IDSS	VDS=-30V, VGS=0V			-1	uA
Gate Threshold Voltage	VGS(TH)	VDS=VGS, IDS=-250uA	-1.0		-2.5	V
Gate Leakage Current	IGSS	VGS=±20V, VDS=0V			±100	nA
Drain-Source On-state Resistance	RDS(on)	VGS=-10V, ID=-8A			21	mΩ
Drain-Source On-state Resistance	RDS(on)	VGS=-4.5V, ID=-6A			34
Diode Forward Voltage	VSD	ISD=-1A, VGS=0V			-1.0	V
Total Gate Charge	Qg	VGS=-10V, VDS=-15V, ID=-8A		12		nC
Gate-Source Charge	Qgs			1.8		nC
Gate-Drain Charge	Qgd			3		nC
Turn-on Delay Time	td(on)	VGS=-10V, VDS=-15V, RGEN=3Ω, RL=1.8Ω		7.7		ns
Turn-on Rise Time	tr			5.5		ns
Turn-off Delay Time	td(off)			26.3		ns
Turn-off Fall Time	tf			11.5		ns
Input Capacitance	Ciss	VGS=0V, VDS=-15V, f=1MHZ		530		pF
Output Capacitance	Coss			114		pF
Reverse Transfer Capacitance	Crss			75		pF

2409302300_JingYang-TPM2030JX_C5364039.pdf

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