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P Channel MOSFET SOT 23 Package Featuring JSCJ CJ3415 R15 Suitable for Load Switching Applications

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P Channel MOSFET SOT 23 Package Featuring JSCJ CJ3415 R15 Suitable for Load Switching Applications

Drain to Source Voltage : 20V

Current - Continuous Drain(Id) : 4A

RDS(on) : 50mΩ@4.5V,4A

Gate Threshold Voltage (Vgs(th)) : 1V

Type : P-Channel

Reverse Transfer Capacitance (Crss@Vds) : 160pF

Number : 1 P-Channel

Output Capacitance(Coss) : 205pF

Input Capacitance(Ciss) : 1.45nF

Pd - Power Dissipation : 350mW

Gate Charge(Qg) : 17.2nC@4.5V

Description : P-Channel 20V 4A 350mW Surface Mount SOT-23

Mfr. Part # : CJ3415 R15

Model Number : CJ3415 R15

Package : SOT-23

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CJ3415 P-Channel MOSFET

The CJ3415 is a P-Channel MOSFET in a SOT-23 package, designed for load switching and PWM applications. It features excellent RDS(ON), low gate charge, and low gate voltages, making it suitable for efficient power management.

Product Attributes

Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Package Type: SOT-23

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage	VDS				-20	V
Gate-Source Voltage	VGS				±8	V
Continuous Drain Current (t≤10s)	ID				-4.0	A
Maximum Power Dissipation (t≤10s)	PD				0.35	W
Thermal Resistance from Junction to Ambient	RθJA				357	°C/W
Operating Junction Temperature	TJ				150	°C
Storage Temperature	TSTG		-55	~+150		°C
Static Parameters (Ta=25 °C unless otherwise specified)
Drain-source breakdown voltage	V(BR)DSS	VGS = 0V, ID =-250µA	-20			V
Gate threshold voltage	VGS(th)	VDS =VGS, ID =-250µA	-0.3	-0.56	-1	V
Gate-body leakage current	IGSS	VDS =0V, VGS =±8V		±10	±1	µA
Zero gate voltage drain current	IDSS	VDS =-16V, VGS =0V			-1	µA
Drain-source on-state resistance(note1)	RDS(on)	VGS =-4.5V, ID =-4A		0.037	0.050	Ω
		VGS =-2.5V, ID =-4A		0.045	0.060
		VGS =-1.8V, ID =-2A		0.056	0.073
Forward transconductance(note2)	gFS	VDS =-5V, ID =-4A		8		S
Body diode voltage(note2)	VSD	IS=-1A,VGS =0V			-1	V
Dynamic Parameters (note3)
Input capacitance	Ciss	VDS =-10V,VGS =0V,f =1MHz		1450		pF
Output capacitance	Coss			205
Reverse transfer capacitance	Crss			160
Gate resistance	Rg	VDS =0V,VGS =0V,f =1MHz			6.5	Ω
Switching Parameters (note3)
Total gate charge	Qg	VDS =-10V,VGS =-4.5V,ID =-4A		17.2		nC
Gate-Source charge	Qgs			1.3
Gate-drain charge	Qgd			4.5
Turn-on delay time(note3)	td(on)	VDS=-10V, VGS=-4.5V RGEN =3Ω, RL=2.5Ω		9.5		ns
Turn-on rise time(note3)	tr			17
Turn-off delay time(note3)	td(off)			94
Turn-off fall time(note3)	tf			35

2410121342_JSCJ-CJ3415-R15_C77896.pdf

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