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Power Switching P Channel MOSFET JSCJ CJ3139K Featuring Low RDSon and Compact SOT 23 Package

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Power Switching P Channel MOSFET JSCJ CJ3139K Featuring Low RDSon and Compact SOT 23 Package

Drain to Source Voltage : 20V

Current - Continuous Drain(Id) : 660mA

RDS(on) : 700mΩ@2.5V

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 1.1V@250uA

Type : P-Channel

Reverse Transfer Capacitance (Crss@Vds) : 15pF

Number : 1 P-Channel

Output Capacitance(Coss) : 25pF

Pd - Power Dissipation : 350mW

Input Capacitance(Ciss) : 170pF

Gate Charge(Qg) : -

Description : P-Channel 20V 0.66A 350mW Surface Mount SOT-23

Mfr. Part # : CJ3139K

Model Number : CJ3139K

Package : SOT-23

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Product Overview

This P-Channel MOSFET features a lead-free, surface-mount SOT-23 package. It offers low RDS(on) for efficient switching and operates at low logic-level gate drive. Ideal for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Package: SOT-23
Certifications: Lead Free Product

Technical Specifications

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Electrical Characteristics	V(BR)DSS	VGS = 0V, ID =-250A			-20	V
	IDSS	VDS =-20V,VGS = 0V			-1	A
	IGSS	VGS =10V, VDS = 0V			20	A
	VGS(th)	VDS =VGS, ID =-250A	-0.35	-0.45		V
	RDS(on)	VGS =-4.5V, ID =-0.8A		430	520	m
Capacitance	Ciss	VDS =-16V,VGS =0V,f =1MHz		113	170	pF
	Coss			15	25	pF
	Crss			9	15	pF
	Switching Characteristics	td(on)	VGS=-4.5V,VDS=-10V, ID =-200mA,RGEN=10		9		ns
	tr			5.8		ns
	td(off)			32.7		ns
	tf			20.3		ns

2410121844_JSCJ-CJ3139K_C2890149.pdf

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