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silicon carbide schottky diode with low forward voltage Bestirpower BCA65S50D4 650 volt 50 amp rating

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silicon carbide schottky diode with low forward voltage Bestirpower BCA65S50D4 650 volt 50 amp rating

Reverse Leakage Current (Ir) : 10nA@650V

Voltage - Forward(Vf@If) : 1.6V@50A

Current - Rectified : 50A

Description : 1.6V@50A 50A TO-247-2 Single Diodes RoHS

Mfr. Part # : BCA65S50D4

Model Number : BCA65S50D4

Package : TO-247-2

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Product Overview

The BCA65S50D4 is a 650V, 50A Silicon Carbide Schottky Diode from Bestirpower, leveraging advanced SiC technology for excellent low forward voltage and robustness. This diode is designed for applications demanding high power efficiency, featuring negligible reverse recovery, high-speed switching, and temperature-independent switching. It is suitable for high-frequency operations, reducing heat dissipation requirements, and enabling smaller, more cost-effective system designs. Key applications include switch-mode power supplies, solar inverters, data centers, and uninterruptible power supplies.

Product Attributes

Brand: Bestirpower
Material: Silicon Carbide (SiC)
Technology: Schottky Diode
Compliance: RoHS compliant

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
VRRM	Repetitive Peak Reverse Voltage				650	V
IF	Forward Current	TC = 25			97	A
IF	Forward Current	TC = 135			50	A
IF,SM	Non-Repetitive Forward Surge Current	TC = 25, tp = 10 ms			291	A
IF,SM	Non-Repetitive Forward Surge Current	TC = 110, tp = 10 ms			192	A
IF,RM	Repetitive Peak Forward Surge Current	TC = 25, tp = 10 ms			262	A
I2dt	I2t value	TC = 25, tp = 10 ms		423		A2s
I2dt	I2t value	TC = 110, tp = 10 ms		184		A2s
Ptot	Power Dissipation	TC = 25			410	W
Ptot	Power Dissipation	TC = 110			178	W
Ptot	Power Dissipation	TC = 150			68	W
TJ,TSTG	Operating Junction and Storage Temperature		-55		175
RJC	Thermal Resistance, Junction to Case	Typ.		0.366		/W
VDC	DC blocking voltage				650	V
VF	Forward Voltage	IF=20A, TJ=25		1.60	1.8	V
VF	Forward Voltage	IF=20A, TJ=175		2.2		V
IR	Reverse Current	VR = 650 V, TJ= 25		0.01	5	A
IR	Reverse Current	VR = 650 V, TJ= 175		1		A
QC	Total Capacitive Charge	VR = 400 V, TJ = 25			115	nC
C	Total Capacitance	VR = 0 V, f = 1MHz		2247		pF
C	Total Capacitance	VR = 200 V, f = 1MHz		217		pF
C	Total Capacitance	VR = 400 V, f = 1MHz		204		pF
EC	Capacitance Stored Energy	VR = 400 V, TC = 25		28		J

Package Information

Part Number	Top Marking	Package	Packing Method	Quantity
BCA65S50D4	BCA65S50D4	TO247-2	Tube	30 units

2512111635_Bestirpower-BCA65S50D4_C53152692.pdf

silicon carbide schottky diode with low forward voltage Bestirpower BCA65S50D4 650 volt 50 amp rating Images

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