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650V 8A Silicon Carbide Schottky Diode Bestirpower BCH65S08D4 Suitable for Solar and UPS Applications

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650V 8A Silicon Carbide Schottky Diode Bestirpower BCH65S08D4 Suitable for Solar and UPS Applications

Reverse Leakage Current (Ir) : 1uA@650V

Voltage - Forward(Vf@If) : 1.55V@8A

Current - Rectified : 8A

Description : 1.55V@8A 8A TO-220-2 Single Diodes RoHS

Mfr. Part # : BCH65S08D4

Model Number : BCH65S08D4

Package : TO-220-2

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Product Overview

The BCH65S08D4 is a 650V, 8A Silicon Carbide (SiC) Schottky Diode from Bestirpower, leveraging advanced SiC technology for excellent low forward voltage and robustness. This diode is designed for applications demanding high power efficiency, featuring negligible reverse recovery, high-speed switching, and temperature-independent switching characteristics. It is ideal for use in switch mode power supplies, solar inverters, data centers, and uninterruptible power supplies, contributing to reduced system size and cost.

Product Attributes

Brand: Bestirpower
Material: Silicon Carbide (SiC)
Technology: Schottky Diode
Certifications: RoHS compliant

Technical Specifications

Symbol	Parameter	Test Conditions	Value	Unit
VRRM	Repetitive Peak Reverse Voltage		650	V
IF	Forward Current	TC = 145	8	A
TC	Case Temperature		145
QC	Total Capacitive Charge	VR = 400 V, TJ = 25	16	nC
VRRM	Repetitive Peak Reverse Voltage		650	V
IF	Forward Current	TC = 25	18	A
IF	Forward Current	TC = 135	9	A
IF	Forward Current	TC = 145	8	A
IF,SM	Non-Repetitive Forward Surge Current	TC = 25, tp = 10 ms	54	A
IF,SM	Non-Repetitive Forward Surge Current	TC = 110, tp = 10 ms	35	A
IF,RM	Repetitive Peak Forward Surge Current	TC = 25, tp = 10 ms	47	A
I2dt	I2t value	TC = 25, tp = 10 ms	15	A2s
I2dt	I2t value	TC = 110, tp = 10 ms	6.2	A2s
Ptot	Power Dissipation	TC = 25	82	W
Ptot	Power Dissipation	TC = 110	36	W
Ptot	Power Dissipation	TC = 150	14	W
TJ,TSTG	Operating Junction and Storage Temperature		-55 to +175
RJC	Thermal Resistance, Junction to Case, Typ.		1.83	/W
VDC	DC blocking voltage		650	V
VF	Forward Voltage	IF=8ATJ=25	1.55	V
VF	Forward Voltage	IF=8ATJ=175	2.1	V
IR	Reverse Current	VR = 650 V, TJ= 25	1	A
IR	Reverse Current	VR = 650 V, TJ= 175	4	A
QC	Total Capacitive Charge	VR = 400 V, TJ = 25	16	nC
C	Total Capacitance	VR = 0 V, f = 1MHz	281	pF
C	Total Capacitance	VR = 200 V, f = 1MHz	30	pF
C	Total Capacitance	VR = 400 V, f = 1MHz	28	pF
EC	Capacitance Stored Energy	VR = 400 V, TC = 25	3.8	J
Part Number			BCH65S08D4
Top Marking			BCH65S08D4
Package			TO220-2
Packing Method			Tube
Quantity			50 units

2512111635_Bestirpower-BCH65S08D4_C53152686.pdf

650V 8A Silicon Carbide Schottky Diode Bestirpower BCH65S08D4 Suitable for Solar and UPS Applications Images

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