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Huixin BC3407 P Channel Enhancement Mode Transistor Designed for Load Switching and PWM Applications

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Huixin BC3407 P Channel Enhancement Mode Transistor Designed for Load Switching and PWM Applications

Drain to Source Voltage : 30V

Current - Continuous Drain(Id) : 4.1A

RDS(on) : 60mΩ@10V,4.1A

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : -

Reverse Transfer Capacitance (Crss@Vds) : 75pF

Number : 1 P-Channel

Input Capacitance(Ciss) : 700pF

Pd - Power Dissipation : 350mW

Description : P-Channel 30V 4.1A 350mW Surface Mount SOT-23

Mfr. Part # : BC3407

Model Number : BC3407

Package : SOT-23

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Product Overview

The BC3407 is a P-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(on) with low gate charge, making it suitable for load switch and PWM applications.

Product Attributes

Marking: 3407

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Maximum Ratings
Drain-Source Voltage	VDS				-30	V
Gate-Source Voltage	VGS				±20	V
Continuous Drain Current	ID				-4.1	A
Power Dissipation	PD				350	mW
Thermal Resistance from Junction to Ambient	RθJA				357	°C/W
Junction Temperature	TJ				150	°C
Storage Temperature	Tstg		-55		+150	°C
Static Characteristics
Drain-source breakdown voltage	BVDSS	VGS = 0V, ID =-250µA	-30			V
Zero gate voltage drain current	IDSS	VDS =-24V,VGS = 0V			-1	µA
Gate-source leakage current	IGSS	VGS =±20V, VDS = 0V			±100	nA
Drain-source on-resistance	RDS(on)	VGS =-10V, ID =-4.1A		60		mΩ
Drain-source on-resistance	RDS(on)	VGS =-4.5V, ID =-3A		87		mΩ
Forward tranconductance	gFS	VDS =-5V, ID =-4A		5.5		S
Gate threshold voltage	VGS(th)	VDS =VGS, ID =-250µA	-1		-3	V
Diode forward voltage	VSD	IS=-1A,VGS=0V		-0.2	-1	V
Dynamic Characteristics
Input capacitance	Ciss	VDS =-15V,VGS =0V,f =1MHz		700		pF
Output capacitance	Coss	VDS =-15V,VGS =0V,f =1MHz		120		pF
Reverse transfer capacitance	Crss	VDS =-15V,VGS =0V,f =1MHz		75		pF
Switching Characteristics
Turn-on delay time	td(on)	VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=3Ω		8.6		ns
Turn-on rise time	tr	VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=3Ω		5.0		ns
Turn-off delay time	td(off)	VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=3Ω		28.2		ns
Turn-off fall time	tf	VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=3Ω		13.5		ns

2410121619_Huixin-BC3407_C5128836.pdf

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