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Non-Repetitive Peak Forward Surge Current : 125A
Reverse Leakage Current (Ir) : 10uA@600V
Reverse Recovery Time (trr) : 50ns
Voltage - DC Reverse (Vr) (Max) : 600V
Diode Configuration : Independent
Operating Junction Temperature Range : -55℃~+150℃@(Tj)
Voltage - Forward(Vf@If) : 1.7V@8A
Current - Rectified : 8A
Description : 125A 50ns 600V Independent 1.7V@8A 8A ITO-220AC Single Diodes RoHS
Mfr. Part # : MUR860F
Model Number : MUR860F
Package : ITO-220AC
The MUR810F THRU MUR860F series are ultra-fast recovery rectifier diodes designed for high efficiency in super-fast switching rectification and freewheeling applications. These diodes are suitable for use in switching mode converters and inverters for consumer, computer, and telecommunication equipment. Key advantages include ultra-fast recovery time, glass passivated chip junction, low leakage current, and high forward surge capability.
| Parameter | Symbol | Unit | Conditions | MUR810F | MUR815F | MUR820F | MUR840F | MUR860F |
| Maximum Ratings | VRRM | V | 100 | 150 | 200 | 400 | 600 | |
| IO | A | 60Hz Half-sine wave, Resistance load, TC(Fig.1) | 8 | 8 | 8 | 8 | 8 | |
| IFSM | A | 60Hz sine wave, 1 cycle , Ta=25 | 125 | 125 | 125 | 125 | 125 | |
| I2t | As | 1mst8.3ms Tj=25 | 65 | 65 | 65 | 65 | 65 | |
| Temperature Ratings | Tstg | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | ||
| Tj | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | |||
| Electrical Characteristics | VFM | V | IFM =8.0A | 0.95 | 0.95 | 1.25 | 1.7 | 1.7 |
| IRRM1 | A | VRM=VRRM Ta=25 | 10 | 10 | 10 | 10 | 10 | |
| IRRM2 | A | Ta=100 | 500 | 500 | 500 | 500 | 500 | |
| Reverse Recovery Time | Trr | ns | IF=0.5A,IR=1.0A,Irr=0.25A | 35 | 35 | 50 | 50 | 50 |
| Thermal Resistance | RJ-C | /W | Between junction and ambient | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 |
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High surge current diode RUILON MUR860F ideal for inverter and switching mode converter applications Images |