Home > Single Diodes >

Power Schottky Barrier Rectifier Minos MBRF20100CT Suitable for Freewheeling and Protection Circuits

Product Categories

Bridge Rectifiers [1296]
Single Bipolar Transistors [2284]
JFETs [73]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [550]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1371]
SCRs [158]
SCRs - Modules [48]
TRIACs [559]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]
Single FETs, MOSFETs [3000]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

Power Schottky Barrier Rectifier Minos MBRF20100CT Suitable for Freewheeling and Protection Circuits

Non-Repetitive Peak Forward Surge Current : 150A

Reverse Leakage Current (Ir) : 100uA@100V

Operating Junction Temperature Range : -65℃~+150℃

Voltage - DC Reverse (Vr) (Max) : 100V

Diode Configuration : 1 Pair Common Cathode

Voltage - Forward(Vf@If) : 1V@20A

Current - Rectified : 10A

Description : Diode Array 1 Pair Common Cathode 100V 10A Through Hole TO-220F

Mfr. Part # : MBRF20100CT

Model Number : MBRF20100CT

Package : TO-220F

Contact Now

Product Overview

POWER SCHOTTKY BARRIER RECTIFIER designed for low-voltage high-frequency inverter circuits, freewheeling circuits, and protection circuits. This device offers reliable performance with specified current and voltage ratings.

Product Attributes

Brand: MNS-KX
Origin: Shenzhen, China

Technical Specifications

Parameter	Symbol	Description	Min	Typ	Max	Unit	Test Conditions
Storage Temperature	T_stg		-65		175
Junction Temperature	T_j		-65		150
Max. Reverse Repetitive Peak Voltage	V_RRM				100	V
Reverse Peak Working Voltage	V_RWM				100	V
Reverse Working Voltage (RMS)	V_R(RMS)				70	V
Max. DC Reverse Voltage	V_R				100	V
Max. Forward Average Current (Tc=125)	I_F(AV)	Entire Device / Single Device			20A / 10A	A
Forward Peak Surge Current (Single Device, 60Hz)	I_FSM				150	A
Reverse Transient Current	I_R		0.15			mA	V_R=V_RRM, T_C= 25 C
				150			T_C= 125 C
Forward Transient Peak Voltage Drop	V_F			0.85		V	I_F= 10 A, T_C= 25 C (Note 1)
				0.75		V	I_F= 10 A, T_C = 125 C
				1.02		V	I_F= 20 A, T_C= 25 C
				0.85		V	I_F= 20 A, T_C = 125 C
Typical Thermal Resistance (Junction to Pin)	R_th(j-c)			4.0		/W	Junction to each pin
Junction Capacitance	C_j			1000		pF	Note 2
Rate of Voltage Rise	dV/dt			10000		V/s
Insulation Voltage (Heatsink to surface, t=3s)	V_ISO		2000			V

Note 1: Pulse test, pulse width 300S, duty cycle 2%.
Note 2: Test condition f=1MHz VR=4V.

Important Notes:
- Exceeding maximum ratings may cause permanent device failure.
- Pay attention to torsional moment and heatsink smoothness during installation.
- MOSFETs are sensitive to static electricity; protect against static discharge.
- Shenzhen Minos reserves the right to make changes without prior notice.

2411120955_Minos-MBRF20100CT_C2920872.pdf

Buy cheap Power Schottky Barrier Rectifier Minos MBRF20100CT Suitable for Freewheeling and Protection Circuits product

Power Schottky Barrier Rectifier Minos MBRF20100CT Suitable for Freewheeling and Protection Circuits Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!