| Sign In | Join Free | My components-electronic.com |
|
Non-Repetitive Peak Forward Surge Current : 280A
Reverse Leakage Current (Ir) : 150uA@45V
Operating Junction Temperature Range : -40℃~+150℃
Voltage - DC Reverse (Vr) (Max) : 45V
Voltage - Forward(Vf@If) : 450mV@10A
Current - Rectified : 10A
Description : Diode 45V 10A Surface Mount SMC
Mfr. Part # : SS10L45C
Model Number : SS10L45C
Package : SMC
The SS10L45C is a Trench MOS Barrier Schottky Rectifier featuring low forward voltage drop, low power losses, and high current capability. Its advanced trench technology and extremely low thermal resistance ensure high efficiency operation. This rectifier is glass passivated, halogen-free, and RoHS compliant, making it suitable for various applications requiring efficient power conversion.
| Parameter | Symbol | Limit | Unit | Typical Value (TJ=25C unless otherwise specified) |
| Maximum repetitive peak reverse voltage | VRRM | 45 | V | |
| Maximum average forward rectified current | IF(AV) | 10 | A | |
| Peak forward surge current (8.3 ms single half sine-wave) | IFSM | 280 | A | |
| Operating junction and storage temperature range | TJ, TSTG | -40 to +150 | C | |
| Typical thermal resistance per diode (Mounted on FR-4 PCB) | RJA | C/W | 25 | |
| Instantaneous forward voltage per diode (IF=5A) | VF(1) | TYP. 0.3, MAX. 0.35 | V | |
| Instantaneous forward voltage per diode (IF=10A) | VF(1) | TYP. 0.39, MAX. 0.45 | V | |
| Instantaneous reverse current per diode at rated reverse voltage (TJ=25C) | IR(2) | 150 | uA | |
| Instantaneous reverse current per diode at rated reverse voltage (TJ=125C) | IR(2) | 50 | mA |
|
|
Low Forward Voltage Drop and High Current PAKER SS10L45C Trench MOS Barrier Schottky Rectifier Device Images |