Home > Single Bipolar Transistors >

Silicon Germanium Bipolar RF Transistor Infineon BFP650FH6327 Suitable for High Frequency RF Circuits

Product Categories

Bridge Rectifiers [1296]
Single Bipolar Transistors [2284]
JFETs [73]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [550]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1371]
SCRs [158]
SCRs - Modules [48]
TRIACs [559]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]
Single FETs, MOSFETs [3000]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

Silicon Germanium Bipolar RF Transistor Infineon BFP650FH6327 Suitable for High Frequency RF Circuits

Current - Collector Cutoff : 500nA

Pd - Power Dissipation : 200mW

Transition frequency(fT) : 46GHz

type : NPN

Current - Collector(Ic) : 50mA

Collector - Emitter Voltage VCEO : 4.1V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor NPN 4.1V 50mA 46GHz 200mW TSFP-4

Mfr. Part # : BFP650FH6327

Model Number : BFP650FH6327

Package : TSFP-4

Contact Now

BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor

The BFP640FESD is a robust, low-noise silicon germanium bipolar RF transistor designed for various RF applications. It offers excellent performance characteristics suitable for demanding RF circuitry.

Product Attributes

Brand: Infineon Technologies
Material: Silicon Germanium (SiGe)
Origin: Germany (Implied by publisher location)

Technical Specifications

Parameter	Value	Conditions	Unit
Maximum Ratings
Collector-Emitter Voltage	20		V
Collector-Base Voltage	20		V
Emitter-Base Voltage	5		V
Collector Current	100		mA
Total Power Dissipation	1.2	Tamb = 25C	W
Storage Temperature	-65 to 150		C
Thermal Characteristics
Thermal Resistance Junction to Ambient	104	(calculated)	K/W
Thermal Resistance Junction to Case	40	(calculated)	K/W
Electrical Characteristics (Typical, unless otherwise specified)
Collector-Emitter Breakdown Voltage	20	IC = 1 mA, IB = 0	V
Collector-Emitter Breakdown Voltage	20	IB = 10 A, IE = 0	V
Emitter-Base Breakdown Voltage	5	IE = 1 mA, IC = 0	V
Collector Cut-off Current	0.01	VCE = 20 V, VBE = 0	A
Emitter Cut-off Current	0.01	VEB = 5 V, VCE = 0	A
DC Current Gain (hFE)	100	VCE = 3 V, IC = 30 mA
Transition Frequency (fT)	65	VCE = 3 V, IC = 30 mA, f = 1 GHz	GHz
Collector-Base Capacitance (CCB)	0.6	VCB = 10 V, f = 1 MHz	pF
Noise Figure (NFmin)	0.6	VCE = 3 V, IC = 6 mA, f = 1 GHz	dB
Noise Figure (NFmin)	1.0	VCE = 3 V, IC = 30 mA, f = 1 GHz	dB
Noise Figure (NF50)	1.0	VCE = 3 V, IC = 6 mA, f = 1 GHz, ZS = 50	dB
Noise Figure (NF50)	1.5	VCE = 3 V, IC = 30 mA, f = 1 GHz, ZS = 50	dB
3rd Order Intercept Point (OIP3)	38	ZS = ZL = 50 , VCE = 3 V, IC = 30 mA, f = 1 GHz	dBm

2410121513_Infineon-BFP650FH6327_C3198367.pdf

Buy cheap Silicon Germanium Bipolar RF Transistor Infineon BFP650FH6327 Suitable for High Frequency RF Circuits product

Silicon Germanium Bipolar RF Transistor Infineon BFP650FH6327 Suitable for High Frequency RF Circuits Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!